Dielectric environment effect on carrier mobility of graphene double-layer structure

Hosono, Kazuhiro; Wakabayashi, Katsunori

doi:10.1063/1.4813821

Cited by 20 publications

(6 citation statements)

References 32 publications

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“…It is obvious that we also get the resistivity of a single graphene layer by considering a very large d value. Moreover, it has been shown that [24] the dielectric constant between the two layers in double-layer graphene systems has a significant role in transport properties. Although increasing the dielectric constant screens the interlayer interaction, it has a significant role on the intralayer screening of the considered layer too.…”

Section: Numerical Results and Discussionmentioning

confidence: 99%

Magnetoresistance of a double-layer hybrid system in a tilted magnetic field

Parhizgar

Asgari

2014

Phys. Rev. B

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The magnetoresistance and Hall coefficient of a doped graphene layer are investigated in the presence of a tilted magnetic field. We consider a graphene layer assembled by either another graphene layer or by a two-dimensional electron gas (2DEG) layer and with the interlayer electron-electron interaction modeled within the random phase approximation. Our calculated magnetoresistances show different interlayer screening effects between decoupled graphene-graphene and graphene-2DEG systems. We also analyze the dependence of dielectric materials as well as the distance between the layers on magnetoresistances. The angle dependence of the Hall coefficient is studied and we show that a quite large Hall resistivity occurs in the graphene layer.

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Section: Numerical Results and Discussionmentioning

confidence: 99%

Magnetoresistance of a double-layer hybrid system in a tilted magnetic field

Parhizgar

Asgari

2014

Phys. Rev. B

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Section: Introductionmentioning

confidence: 99%

“…We have pointed out that the carrier mobility of GDLS strongly depends on the dielectric constant of the barrier layer when the interlayer distance becomes larger than the inverse of the Fermi wave vector. 26) However, we have considered only the case in which the carrier concentrations at each layer are equivalent (n ð1Þ c ¼ n ð2Þ c ), and have neglected carrier density polarization, for simplicity. Since the carrier density at each layer can be controlled by adjusting the gate voltage in the experiments, it is necessary to develop a theory that takes carrier imbalance into account.…”

Section: Introductionmentioning

confidence: 99%

Theory of carrier transport in graphene double-layer structure with carrier imbalance

Hosono¹,

Wakabayashi²

2014

Jpn. J. Appl. Phys.

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The carrier mobility of a graphene double-layer system is evaluated on the basis of the Boltzmann transport theory. In this system, two graphene layers are separated by a dielectric barrier layer. We focus on the cases in which there is carrier imbalance between the two layers. It is found that the mobility can be improved by controlling the carrier density polarization between the two layers if we choose an appropriate dielectric environment.

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“…As a consequence, it is crucial to seek an alternative structure for enhancing the MFP of SC-MLGNR. Over the past few years, it is reported that the carrier mobility of GNR layers can be improved by inserting the high-k dielectric layer between two adjacent GNR layers, hence its MFP could be improved [16], [18]. This can restrict SC-MLGNR to turn into the graphite and improve the total number of graphene layers of SC-MLGNR interconnects.…”

mentioning

confidence: 99%

Collaborative Applying the Ultra-low-k Dielectric and the High-k Dielectric Materials for Performance Enhancement in Coupled Multilayer Graphene Nanoribbon Interconnects

Zhang

2020

IEEE J. Electron Devices Soc.

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Based on transmission line modeling, a new technology of collaborative applying the ultralow-k dielectric and the high-k dielectric materials in coupled multilayer graphene nanoribbon (MLGNR) interconnects (i.e., case 4) to reduce propagation delay and to expand 3-dB bandwidth of the conventional pristine (undoped) MLGNR interconnects is proposed in this paper. By using the decoupling technique and ABCD parameter matrix approach, the transfer function of the equivalent circuit model for coupled MLGNR interconnects is derived to obtain step response, propagation delay, transfer gain and 3-dB bandwidth under in-phase and out-of-phase crosstalk modes at global level of 7.5 nm technology node, which is based on the defined four cases. The results show that the maximum reduction of propagation delay between the proposed new technology (case 4) and the conventional MLGNR interconnects (case 1) can reach 15.911 ns at out-of-phase crosstalk mode for an interconnect length of 4000 µm. The corresponding 3-dB bandwidth for them can be expanded over 2.978 times in the same length as the former. It is demonstrated that the proposed case 4 can obviously reduce the propagation delay and enhance the transfer gain and 3-dB bandwidth compared with the conventional case 1. Moreover, it is found that the coupled MLGNR interconnect under in-phase mode outperform that under out-of-phase mode in terms of propagation delay, transfer gain and 3-dB bandwidth at the same condition. In addition, it is manifested that the victim line of two-line coupled MLGNR interconnects have lesser propagation delay, higher transfer gain and larger 3-dB bandwidth, as compared to three-line coupled MLGNR interconnects at the same case. The proposed new technology in this paper would be beneficial to improve the performance of MLGNR interconnects and to provide the guidelines for the design of next generation on-chip MLGNR interconnect system. INDEX TERMS MLGNR interconnects, step response, propagation delay, transfer gain, 3-dB bandwidth, ultra-low-k dielectric, high-k dielectric. I. INTRODUCTION With the continuous advancement of semiconductor manufacturing technology in very large-scale integrated (VLSI) circuits, a series of performance degradation on the conventional copper (Cu) based interconnects have been reported, such as the larger resistivity, electro-migration and smaller

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Dielectric environment effect on carrier mobility of graphene double-layer structure

Cited by 20 publications

References 32 publications

Magnetoresistance of a double-layer hybrid system in a tilted magnetic field

Magnetoresistance of a double-layer hybrid system in a tilted magnetic field

Theory of carrier transport in graphene double-layer structure with carrier imbalance

Collaborative Applying the Ultra-low-k Dielectric and the High-k Dielectric Materials for Performance Enhancement in Coupled Multilayer Graphene Nanoribbon Interconnects

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