1992
DOI: 10.1103/physrevb.45.6961
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Dielectric confinement effect on excitons inPbI4-based layered semiconductors

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Cited by 724 publications
(592 citation statements)
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“…Subsequently, a slower decay of the PB of n=2 QWs also matches well with a relative slower formation of the large-n QWs PB. This relatively slower exciton localisation time is fitted to be ~50 ps.The rapid energy transfer process in the perovskite MQWs can essentially avoid the exciton quenching effect presented in previously reported 2D perovskites 6,7 . Figure 1h shows the light-intensity-dependent PLQE of the NFPI7 film under a 445 nm cw laser excitation.…”
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“…Subsequently, a slower decay of the PB of n=2 QWs also matches well with a relative slower formation of the large-n QWs PB. This relatively slower exciton localisation time is fitted to be ~50 ps.The rapid energy transfer process in the perovskite MQWs can essentially avoid the exciton quenching effect presented in previously reported 2D perovskites 6,7 . Figure 1h shows the light-intensity-dependent PLQE of the NFPI7 film under a 445 nm cw laser excitation.…”
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confidence: 99%
“…The 2D L2MX4 perovskites generally have good film-formation properties 13 . Nevertheless, the PLQEs of the 2D perovskites are rather low at room temperature, owing to fast exciton quenching rates 6,7 . LEDs based on the 2D perovskites have been attempted, while the devices are either very low in efficiency or only operational at cryogenic temperatures [16][17][18] .…”
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