Dielectric Characterization of Al/PAN/n˗Si/Al Structure as a Function of Frequency and Voltage

Abstract

In this study, the voltage and frequency dependencies of dielectric properties of Al/Polyacrylonitrile (PAN)/n˗Si/Al metal/polymer/semiconductor (MPS) were analyzed. To determine the dielectric characteristics, capacitance˗voltage (C–V) and conductance˗voltage (G–V) of Al/PAN/n˗Si/Al were measured depending on the frequency and bias voltage ranges in 10 kHz–1 MHz and ±5 V at room temperature. Using the C–V and G–V measurements, dielectric parameters; ε′, ε″, and tan δ, M′and M″, were evaluated depending on voltage and frequency. As the frequency increased, ε′ and ε″ decreased, while peaks related to the relaxation mechanism were observed in M″ and tan δ. The ε′ values at 10 kHz and 1 MHz are 15.2 and 4.58 for 1 V, respectively. Relaxation times were calculated using the peaks in the M″˗f plot and it was seen that the relaxation time decreased as the bias voltage increased. Relaxation mechanism is related to non˗Debye relaxation in PAN/n–Si structure. The existence of relaxation peaks in M″ curves showed that the studied material is an ionic conductor.