Dielectric characteristics of a metal–insulator–metal capacitor using plasma-enhanced chemical vapor deposited silicon nitride films

Abstract

Metal-insulator-metal capacitors using Y 2 O 3 dielectric grown by pulsed-injection plasma enhanced metalorganic chemical vapor deposition J. Vac. Sci. Technol. A 22, 655 (2004); 10.1116/1.1722633 Composition, structural, and electrical properties of fluorinated silicon-nitride thin films grown by remote plasmaenhanced chemical-vapor deposition from SiF 4 / NH 3 mixtures J. Vac. Sci. Technol. A 22, 570 (2004); 10.1116/1.1699335 Dielectric properties of amorphous hydrogenated silicon carbide thin films grown by plasma-enhanced chemical vapor deposition Silicon nitride thin films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition

TEM studies of Ge nanocrystal formation in PECVD grown SiO2:Ge/SiO2multilayers

“…From electrical measurements it is found that the retention time of the double layer nanocrystal devices over the single layer ones is much improved. The charge transfer prefers direct tunnelling through thin tunnelling and interlayer oxides even in the double layer nanocrystal structure [14]. Further investigation of the dynamics of this bilayer formation may shed light into ways of controlling the size of the nanocrystals.…”

“…For memory device applications, it is also crucial to control the thickness of the SiO 2 tunnel oxide underneath the nanocrystal layer, as well as the density and size of the Ge nanocrystals. While a number of techniques to prepare Ge nanocrystals are being used, germanosilicate films deposited by PECVD have some advantages due to low temperature of deposition, excellent step coverage characteristics, high blocking effects against moisture and alkaline ions, and relatively high dielectric constant values [14]. The direct growth process is probably the most promising among the techniques that have been proposed.…”

Stress-induced failure of Si3N4 metal-insulator-metal capacitors fabricated by plasma enhanced chemical vapor deposition

“…1 The capacitance of an MIM capacitor is inversely proportional to the thickness of the dielectric layer as shown in Eq. As for capacitor, the Si 3 N 4 metal-insulator-metal ͑MIM͒ structure has been widely adopted up to date because not only the dielectric characteristic of Si 3 N 4 is superior to that of conventional SiO 2 , but also the capacitance is independent of the applied bias.…”

Surface Control of Bottom Electrode in Ultra-Thin SiN Metal–Insulator–Metal Decoupling Capacitors for High Speed Processors

“…From the viewpoint of manufacturing, SiN (k ¼ 6 { 8 [7][8][9][10] ) is the first candidate for the dielectric of the MIM, because it is a mature material and highly compatible with existing fabrication lines. The capacitance of the SiN MIM, however, has been reported as $2 fF/mm 2 , with thicker than 30 nm thickness, 11) which is not sufficient for decoupling capacitors in the advanced devices. It is easy option to reduce the SiN thickness to achieve higher capacitance, but degradations of both leakage current and reliability limit the film thinning.…”