Dielectric Behavior and Prolate Growth Patterns of Silicon Clusters Si_N with N = 12–30 by Cryogenic Electric Beam Deflection

Abstract

We present a comprehensive investigation of the dielectric behavior and geometric structures of cold neutral Si N clusters of intermediate size with N = 12−30 atoms. For this, cryogenic electric beam deflection experiments were carried out for the first time for Si clusters at nozzle temperatures below 30 K. In combination with quantum chemical calculations based on density functional theory and classical trajectory simulations of the rotational dynamics in the electric field, the geometric structures of the clusters are discriminated. Clusters with N < 15 favor a single-capped square antiprism as a nucleus for cluster growth, forming compact geometries in the molecular beam. Starting with 15 atoms, a prolate-like growth is observed. The prolate structures are based on stable building blocks which reappear for numerous sizes throughout the cluster growth. Finally, the transition from prolate to quasi-spherical shapes is shown to take place around Si 29 /Si 30 as predicted theoretically by the literature. The influence of the exchange−correlation functional on the predicted structure and dielectric properties is discussed in detail for some clusters. Relaxation of the electric-dipole moment and therefore quenching of the observed electric response due to vibrational excitation and collisions with the background gas are also considered, which explains deviations between experiment and theory.