Dielectric and energy storage behavior of CaCu3Ti4O12 nanoparticles for capacitor application

Ultrahigh efficiency and enhanced discharge energy density at low loading of nanofiller in trilayered polyvinylidene fluoride‐Ba0.8Sr0.2TiO3 nanocomposites

“…This unipolar D-E loop is used to calculate the charging energy density, discharging energy density (U D ) and efficiency (η). 3 The adopted method and other useful informations are given in the Supporting information S3. 3 vol% loaded PVDF-BST trilayered nanocomposite has the highest maximum polarization (P max ) $1.30 μC/cm 2 .…”

“…The structured thin film that could be deposited over a large volume will miniaturize the electronic and serve the purpose in a better way. Fundamentally, the electrostatic energy density of a linear dielectric material is given as 3 :…”

Evidence of ferroelectric behaviour in CaCu3Ti4O12 thin films deposited by RF-sputtering

“…Over the last two decades, great effort has been put into unravelling the origins of the colossal dielectric constant of CCTO in the form of bulk and crystalline thin films [6][7][8][9][10][11][12][13]. Previously intrinsic mechanisms related to the crystal structure have been studied as a potential cause of CCTO giant permittivity.…”

“…Several physical and chemical techniques have been used to deposit high-quality CCTO films, such as metal organic chemical vapour deposition (MOCVD), sol-gel method, chemical solution deposition, pulsed laser deposition (PLD) and radio frequency (RF) sputtering [3,6,9,12]. Among these techniques, RF-sputtering is the most accessible method due to several advantages: relatively cost-effective, low process temperature, easyto-control parameters, high deposition rate, uniform microstructure, scalability to large areas, homogeneity over large areas, reproducibility and very good stability [21,22].…”

“…High dielectric constant ε r thin films have been studied in order to pursue better device performances in various passive and active components. These devices require high capacitance to store more charges and/or to reduce the operating voltage [10,12,[28][29][30][31]. Since the dielectric behaviour for generating high permittivity is generally based on ionic and dipolar (orientational) polarization mechanisms, ferroelectric perovskite materials showing spontaneous polarization at room temperature, including representative BaTiO 3 and Pb(Zr,Ti)O 3 , are preferably adjusted for the highest ε r thin film applications [32][33][34].…”