Dielectric and electrical properties of annealed ZnS thin films. The appearance of the OLPT conduction mechanism in chalcogenides

Koaib, J.; Bouguila, N.; Abassi, H.; Moutia, N.; Kraini, M.; Timoumi, A.; Vázquez–Vázquez, C.; Khirouni, K.; Alaya, S.

doi:10.1039/c9ra10284a

Cited by 34 publications

(13 citation statements)

References 53 publications

(45 reference statements)

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“…Currently, much work is interested in electrical and dielectric properties of materials [ 30 , 31 , 32 ]. Nyquist plots are commonly used for characterizing electrical and dielectric properties of semiconductors’ materials [ 33 , 34 , 35 , 36 ], so we constructed Nyquist plots for our In 2 S 3 powder samples. Doping is one of the approaches used to minimize electrical resistivity [ 37 ]; therefore, to study the dopant effects on the dielectric behavior of the In 2 S 3 samples, we used impedance spectroscopy (IS).…”

Section: Resultsmentioning

confidence: 99%

“…The diameter and shape of the semicircles changed with the temperature, which indicates temperature-dependent semiconductor behavior [ 39 , 40 ]. Initially, the Nyquist diagrams illustrate increases in the semi-circular diameters as the temperature increases above 200 °C [ 33 , 41 ]. However, the semi-circles shifted to lower frequencies, and their diameters decreased after heating to 260–320 °C, indicating a thermally activated electrical conductivity and relaxation time distribution [ 42 ].…”

Section: Resultsmentioning

confidence: 99%

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Physical and Dielectric Properties of Ni-Doped In2S3 Powders for Optical Windows in Thin Film Solar Cells

et al. 2021

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This paper reports the effect of Nickel (Ni) on indium sulfide (In2S3) powder. This work presents a systematic study of the physical and dielectric properties of In2-xS3Nix powders with 0, 2, 4, and 6 at.% of nickel. Doped and undoped samples were investigated by X-ray powder diffraction (XRD), energy dispersive X-ray spectroscopy, thermal gravimetric analysis, Fourier transform infrared (FTIR) spectroscopy, Raman spectroscopy, scanning electron microscopy (SEM), and impedance spectroscopy. XRD patterns revealed that each In2-xS3Nix composition was crystalline, which was also confirmed by the FTIR results. The presence of Ni in the samples was confirmed by energy dispersive spectroscopy (EDS). The Raman studies show different peaks related to the In2S3 phase and do not reveal any secondary phases of In–Ni and Ni–S. The SEM images of the undoped and Ni-doped In2S3 samples indicated a correlation between dopant content and the surface roughness and porosity of the samples. The impedance analysis indicated semiconductor behavior present in all samples, as well as a decrease in resistance with increasing Ni content. This work opens up the possibility of tailoring the properties and integrating Ni-doped In2S3 nanocomposites as thin film layers in future solar cells.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Physical and Dielectric Properties of Ni-Doped In2S3 Powders for Optical Windows in Thin Film Solar Cells

et al. 2021

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“…The reduction in the band gap energy of MnS with the preparation temperature increase is attributed to the increasing of the crystallite size of the samples. Furthermore, the smaller value of the band gap compared with other bandgap values obtained by other works [ 20 ] may be due to existence of a large amount of defect levels in forbidden band of samples.…”

Section: Resultsmentioning

confidence: 66%

“…[ 19 ] The metastable structure, γ‐MnS thin film converted to the stable form α‐MnS at high annealing temperatures, while the metastable structure β‐MnS thin film favored to be in the same structure at high annealing temperatures. [ 20 ] The fluorescence emission of nano Zn 0.75 Cd 0.25 S has a higher value as the sample prepared at 200 °C. [ 21 ] The energy gap and the emission intensity of ZnS/Mn quantum dots were reduced as the reaction temperature raised.…”

Section: Introductionmentioning

confidence: 99%

“…[ 22 ] The ZnS films annealed at 350 °C revealed the highest conductance and the lowest activation energy as compared with other annealing temperatures. [ 20 ] Bashar et al. [ 23 ] studied the influence of rapid thermal annealing on structural and optical characteristics of ZnS thin films fabricated using RF magnetron sputtering method.…”

Section: Introductionmentioning

confidence: 99%

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Influence of Synthesis Temperature on the Phases Developed and Optical Properties of Manganese Sulfide and Zinc Sulfide

Mohamed

Farag

Ahmed

2021

Crystal Research and Technology

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Nano MnS and ZnS samples are prepared through a simple thermolysis procedure. The effect of synthesis temperature on the different phases formed and their percentages, and on the lattice parameters and crystallite size of MnS and ZnS is examined using Rietveld analysis for X‐ray diffraction patterns. The minimum synthesis temperature at which MnS can be formed by the present simple procedure is 250 °C, while ZnS can be prepared at a lower temperature of 200 °C. For manganese sulfide, traces of Mn3O4 phase appear at 300 °C and increase with temperature, while ZnS resists oxidation until 500 °C; pure ZnO forms at 700 °C. The MnS and ZnS samples, obtained at all temperatures, are found to be biphasic; cubic and hexagonal. The nano nature of the samples and the particle morphology are investigated by high‐resolution transmission electron microscopy. Fourier‐transform infrared spectroscopy is applied to follow the characteristic vibration bands in both systems. The values of the different energy gaps depend on the crystallite size, phases’ percentages, and the preparation temperature. The photoluminescence intensity and the emitted colors from MnS and ZnS depend on the synthesis temperature.

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Microwave‐assisted synthesis of praseodymium (Pr)‐doped ZnS QDs such as nanoparticles for optoelectronic applications

et al. 2023

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Pr‐doped ZnS nanoparticles were synthesised using a low‐cost microwave assisted technique and investigations on their structure, morphology, optical properties, Raman resonance, dielectric properties and luminescence were conducted. Broad XRD peaks suggested the formation of low‐dimensional Pr‐doped ZnS nanoparticles with a cubic structure which was validated by TEM/HRTEM analysis. The energy gaps were identified using diffuse reflectance spectroscopy and it was found that the values varied between 3.54 and 3.61 for different samples. Vibrational experiments on Pr doped ZnS nanoparticles revealed significant Raman modes at ~ 270 and ~350 cm ‐1 associated to TO and LO modes that are shifted to lower wavenumbers, indicating phonon confinement in the synthesised products. The PL spectra of all samples demonstrate that the pure and Pr doped ZnS nanoparticles are three level laser active materials. EDX and mapping study confirms the homogeneous presence of Pr in ZnS. TEM study shows that the particles are of very small size and cubic phase. The samples have high dielectric constant values between 13 and 24 and low loss values, according to the dielectric analysis. With an increase in frequency and a change in the Pr content of ZnS, an intense peak can be seen in the PL spectra at a wavelength of 360 nm, and some other peaks observed correspond to the transition of Pr 3+. The produced NPs are appropriate for optoelectronic applications due to their short dimension, high energy gap, high dielectric constant and low loss values.

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Dielectric and electrical properties of annealed ZnS thin films. The appearance of the OLPT conduction mechanism in chalcogenides

Abstract: The annealing temperature (Ta) dependence of the structural, morphological, electrical and dielectric properties of ZnS thin films was investigated.

Cited by 34 publications

References 53 publications

Physical and Dielectric Properties of Ni-Doped In2S3 Powders for Optical Windows in Thin Film Solar Cells

Physical and Dielectric Properties of Ni-Doped In2S3 Powders for Optical Windows in Thin Film Solar Cells

Influence of Synthesis Temperature on the Phases Developed and Optical Properties of Manganese Sulfide and Zinc Sulfide

Microwave‐assisted synthesis of praseodymium (Pr)‐doped ZnS QDs such as nanoparticles for optoelectronic applications

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