Dielectric and Electrical Properties of InSe Films

Abstract

The dielectric and electrical properties of sandwiched A1-InSe-A1 structures of different thicknesses are investigated. For a11 the thicknesses the capacitance and tan 6 decrease with increase in frequency. The I-V characteristics of Al-InSe-A1 structures have been studied for different thicknesses. These curves exhibit three regions ohmic, non-ohmic and breakdown regions. Optical micrographs of breakdown patterns at different stages have been taken and the results are discussed.