Dielectric aging and its temperature dependence in ferroelectric ceramics

Robels, U.; Schneider-Störmann, Ludger; Arlt, G.

doi:10.1080/00150199508217643

Cited by 31 publications

(13 citation statements)

References 18 publications

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“…One is concerned with mechanical deterioration, in which microcracks reduce the local effective field or yield conductive corrosion paths in the materials and, thus, decrease the number of domains that switch in the proximity of such cracks [19,20]. The other category is related to electrochemical variation, in which domains become inactive due to point defects pinning the domain walls [21][22][23].…”

Section: (1) Fatigue Stage and Mechanism Of The Fatiguementioning

confidence: 98%

Frequency Dependent Electric Fatigue in Antiferroelectric PZST Ceramics

et al. 2005

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Frequency dependent electric fatigue in ferroelectric and antiferroelectric ceramics under a.c. electric field was theoretically predicted, which has been experimentally confirmed for ferroelectric materials. In this study, the frequency dependence of electric fatigue was investigated for antiferroelectric PZST ceramics. Low frequency yields a faster fatigue with cycle number than high frequency. The pinning of domain walls is attributed to the main fatigue mechanism for the material. The frequency dependent electric fatigue results from the frequency dependence of the pinning processes, which is related to the frequency dependence of migration and redistribution of charged species in the material during cycling. With an increase in the extent of the fatigue, the polarization and strain hysteresis loops show a sequence of variations, i.e. deterioration of the switchable polarization and maximum strain, increase in FE-AFE transition field and enhancement in the degree of diffusion for the phase transitions.

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Section: (1) Fatigue Stage and Mechanism Of The Fatiguementioning

confidence: 98%

Frequency Dependent Electric Fatigue in Antiferroelectric PZST Ceramics

et al. 2005

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“…11 The former are based on the scenario that domains become inactive due to point defects pinning the domain walls. [12][13][14] The latter rests on the idea that microcracks reduce the local effective field or yield conductive corrosion pathways in the material, thus decreasing the number of domains which can switch in the proximity of such cracks. 15,16 The electrochemical variations can be relieved by heat treatment at temperatures exceeding 300-500 • C, 17 while the mechanical deterioration in fatigued samples cannot be recovered below sintering temperatures.…”

Section: Introductionmentioning

confidence: 99%

Electric fatigue in antiferroelectric Pb0.97La0.02(Zr0.55Sn0.33Ti0.12)O3 ceramics induced by bipolar cycling

Zhou

Rixecker

Zimmermann

et al. 2006

Journal of the European Ceramic Society

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“…Using electron paramagnetic resonance, we have been able to unambiguously demonstrate that prolonged bias stress conditions aligns defect-dipoles along the applied external field direction in both BaTi03 and PZT materials [21,28]. The alignment was shown to occur via orientational dependent EPR centers in a polycrystalline lattice.…”

Section: Defect-dipole Alignmentmentioning

confidence: 90%

“…Several investigators have proposed that voltage shifts are due to defect-dipoles; more specifically, voltage offsets are considered to be a bulk effect and are caused only by the orientation (alignment) of defect-dipoles [9,11,12,16,21]. There are a number of compelling reasons why this model is questionable.…”

Section: Defect-dipoles and Voltage Shiftsmentioning

confidence: 92%

“…They further proposed that dielectric aging is due to a gradual alignment of doubly positively charged oxygen-vacancy (Vo") associated defectdipoles in the perovskite lattice. Arlt and co-workers [11,12,21] have provided a quantitative model describing the kinetics of defect-dipole alignment and have also proposed that defectdipole alignment is intimately involved in ferroelectric aging.…”

Section: Defect-dipole Alignmentmentioning

confidence: 99%

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Voltage Shifts and Defect-Dipoles in Ferroelectric Capacitors

1996

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We review the processes and mechanisms by which voltage offsets occur in the hysteresis loop of ferroelectric materials. Simply stated, voltage shifts arise from nearinterfacial charge trapping in the ferroelectric. We show that the impetus behind voltage shifts in ferroelectric capacitors is the net polarization, with the net polarization being determined by the perovskite and the aligned defect-dipole components. Some common defect-dipoles in the PZT system are lead vacancy-oxygen vacancy complexes. One way to change the net polarization in the ferroelectric is to subject the PZT capacitor to a dc bias at elevated temperature; this process is spectroscopically shown to align defect-dipoles along the direction of the applied electric field. The alignment of defect-dipoles can strongly impact several material properties. One such impact is that it can lead to enhanced voltage shifts (imprint). It is proposed that the net polarization determines the spatial location of the asymmetrically trapped charge that are the cause for the voltage shifts. An'enhanced polarization at one electrode interface can lead to larger voltage shifts since it lowers the electrostatic potential well for electron trapping, i.e., more electron trapping can occur. Defect-dipole alignment is also shown to increase the UV sensitivity of the ferroelectric.

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Dielectric aging and its temperature dependence in ferroelectric ceramics

Cited by 31 publications

References 18 publications

Frequency Dependent Electric Fatigue in Antiferroelectric PZST Ceramics

Frequency Dependent Electric Fatigue in Antiferroelectric PZST Ceramics

Electric fatigue in antiferroelectric Pb0.97La0.02(Zr0.55Sn0.33Ti0.12)O3 ceramics induced by bipolar cycling

Voltage Shifts and Defect-Dipoles in Ferroelectric Capacitors

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