Die Bildungsenthalpien von SiCl4, SiBr4 und SiJ4

Schäfer, Harald; Heine, Heinz

doi:10.1002/zaac.19643320105

Cited by 17 publications

(1 citation statement)

References 24 publications

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“…: SiF 4 : –95.0 °C, b.p. SiCl 4 : 57.1 °C, SiBr 4 : 154.7 °C, SiI 4 : 287.5 °C). SiI 4 was reported to decompose to the elements upon heating under vacuum .…”

Section: Resultsmentioning

confidence: 99%

Facile Syntheses of pure Uranium(III) Halides: UF₃, UCl₃, UBr₃, and UI₃

Rudel

Deubner

Scheibe

et al. 2018

Zeitschrift anorg allge chemie

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Herein we describe a convenient lab scale synthesis for pure and solvent-free binary uranium(III) halides UCl 3 , UBr 3 , and UI 3 . This is achieved by the reduction of the respective uranium(IV) halides with elemental silicon in borosilicate ampoules at moderate temperature. The silicon tetrahalides SiX 4 formed as a side product are utilized for the removal of excess starting material via a chemical vapor transport reaction. The syntheses introduced herein avoid the need for pure metallic uranium and are based on uranium(IV) halides synthesized from UO 2 and the respective aluminum halides and purified by chemi-

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“…: SiF 4 : –95.0 °C, b.p. SiCl 4 : 57.1 °C, SiBr 4 : 154.7 °C, SiI 4 : 287.5 °C). SiI 4 was reported to decompose to the elements upon heating under vacuum .…”

Section: Resultsmentioning

confidence: 99%

Facile Syntheses of pure Uranium(III) Halides: UF₃, UCl₃, UBr₃, and UI₃

Rudel

Deubner

Scheibe

et al. 2018

Zeitschrift anorg allge chemie

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Themodynamic Approach to Diffusion‐Controlled Epitaxial Silicon Deposition in Flow System from SiCl₄ + H₂ Mixtures

Riedl¹

1972

Cryst Res and Technol

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Treatment of diffusion-controlled chemical vapour deposition (CDV) usually neglects supersaturation a t the gas-solid interface, which is the basic condition for crystal growth. A new approach based on metastable equilibria and on the concept of activit,y, taking into account departure from equilibrium has been given and applied t o the system resulting from SiCl, + H, mixtures. The control of activity a t the gassolid interface should provide a method of controlling the morphology and perfection of CVD films.Die Behandlung der diffusionsbestimmten chemischen Dampfabscheidung (CVD) vernachlassigt gewohnlich die fibersattigung der Gas-fest-Grenzflache, die die Grundbedingung fur das Kristallwachstum darstellt. Die vorliegende Betrachtung grundet sich auf das metastabile Gleichgewicht und auf die Aktivitat. indem die Abweichung vom Gleichgewicht zugrunde gelegt wird. Ein aus (SiC1, + H,)-Mischungeri hestehendes System wird untersucht. Die Beherrschung der Aktivitat der Gasfest-Grenzflache sollte eine Methode zur Regelung der Morphologie und der Perfektion dunner CVD-Schichten ermoglichen. Main steps in chemical vapour deposition (CVD)SiCI, reduction by H, is one of the most frequently used CVD-processes for epitaxial silicon (THEUERER 1960(THEUERER ,1961(THEUERER , 1964 Chemical vapour deposition on substrates or on already present crystal films occurs usually near atmospheric pressure. Excluding reactions in the gas phase, the deposition consists of the following steps:1. Transport of reactants through the gas phase t o the deposition surface. 2. Surface processes, such as adsorption (both physical and activated) of reactants, chemical reactions, nucleation, crystal growth a n d desorption of products.3. Transport of final products away from the deposition surface.Depositions, the rate of which are controlled by steps 1 and 3 or by step 2 are referred t o as "diffusion-controlled" or "kinetically-controlled", respectively.

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Kinetics of the reduction of silicon tetrachloride and trichlorosilane by hydrogen

Ashen¹,

Bromberger²,

Lewis³

1968

J. Appl. Chem.

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Reaction products from SiCl4/H2 and SiHCl3/H2 mixtures have been examined over the temperature range 800–1200°K, and the conditions under which equilibrium is reached have been established. The results point to a ΔH° for SiCl4 of between −162 and −163 kcal/mole. The reaction rates expressed in mole/1/sec were: d[SiHCl3]/dt = 7.8 × 1010 [SiCl4] [H2]1/2 exp −55,000/RT and d[SiH2Cl3]/dt = 2.0 × 1010 [SiHCl3] exp −51,000/RT and kinetic mechanisms have been suggested.

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Die Bildungsenthalpien von SiCl₄, SiBr₄ und SiJ₄

Cited by 17 publications

References 24 publications

Facile Syntheses of pure Uranium(III) Halides: UF₃, UCl₃, UBr₃, and UI₃

Facile Syntheses of pure Uranium(III) Halides: UF₃, UCl₃, UBr₃, and UI₃

Themodynamic Approach to Diffusion‐Controlled Epitaxial Silicon Deposition in Flow System from SiCl₄ + H₂ Mixtures

Kinetics of the reduction of silicon tetrachloride and trichlorosilane by hydrogen

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Die Bildungsenthalpien von SiCl4, SiBr4 und SiJ4

Cited by 17 publications

References 24 publications

Facile Syntheses of pure Uranium(III) Halides: UF3, UCl3, UBr3, and UI3

Facile Syntheses of pure Uranium(III) Halides: UF3, UCl3, UBr3, and UI3

Themodynamic Approach to Diffusion‐Controlled Epitaxial Silicon Deposition in Flow System from SiCl4 + H2 Mixtures

Kinetics of the reduction of silicon tetrachloride and trichlorosilane by hydrogen

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Die Bildungsenthalpien von SiCl₄, SiBr₄ und SiJ₄

Facile Syntheses of pure Uranium(III) Halides: UF₃, UCl₃, UBr₃, and UI₃

Facile Syntheses of pure Uranium(III) Halides: UF₃, UCl₃, UBr₃, and UI₃

Themodynamic Approach to Diffusion‐Controlled Epitaxial Silicon Deposition in Flow System from SiCl₄ + H₂ Mixtures