Die abhängigkeit der trägerbeweglichkeit in silizium von der konzentration der freien ladungsträger—I

Dannhäuser, F.

doi:10.1016/0038-1101(72)90131-1

Cited by 108 publications

(26 citation statements)

References 15 publications

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“…However, data for the electron and hole mobility sum as a function of excess carrier density available to date have only been measured at room temperature [9]- [12]. Experimental evidence on the simultaneous impact of excess carrier injection and temperature does not exist, to our knowledge.…”

Section: Measurement and Parameterization Of Carrier Mobility Sum In mentioning

confidence: 96%

Measurement and Parameterization of Carrier Mobility Sum in Silicon as a Function of Doping, Temperature and Injection Level

Zheng

Rougieux

Macdonald

et al. 2014

IEEE J. Photovoltaics

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Abstract-Based on contactless photoconductance measurements of silicon wafers, we have determined the sum of the electron and hole mobilities as a function of doping, excess carrier concentration, and temperature. By separately analyzing those three functional dependences, we then develop a simple mathematical expression to describe the mobility sum as a function of carrier injection wafer doping and temperature from 150 to 450 K. This new parameterization also provides experimental validation to Klaassen's and Dorkel-Leturcq's mobility models in a range of temperatures.Index Terms-Charge carrier mobility, mobility sum, silicon, temperature and injection dependent.

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Section: Measurement and Parameterization Of Carrier Mobility Sum In mentioning

confidence: 96%

Measurement and Parameterization of Carrier Mobility Sum in Silicon as a Function of Doping, Temperature and Injection Level

Zheng

Rougieux

Macdonald

et al. 2014

IEEE J. Photovoltaics

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“…Fig. 4 shows the resulting mobility sum and the mobility models of Dannhauser-Krausse [1], [2], Klaassen [17], [18], and DorkelLeturcq [19]. Within error, the measured mobility and the data from Dannhauser [see Fig.…”

Section: A Accuracy Of the Methodsmentioning

confidence: 99%

“…To demonstrate the accuracy of the method, the mobility sum was measured in samples with similar resistivities (100-1000 Ω·cm, 0.90 Ω·cm p-type) to the sample that was used by Dannhauser (1000-3000 Ω·cm p-type) [1] and the samples that were used by Neuhaus et al (0.96 Ω·cm p-type) [7]. Fig.…”

Section: A Accuracy Of the Methodsmentioning

confidence: 99%

“…It is well known that the mobility decreases with both carrier injection level [1], [2] and sample temperature [3]. Since solar cells often operate under a wide range of injection levels and temperatures, it is, thus, fundamental to determine the impact of those parameters on the carrier mobility.…”

Section: Introductionmentioning

confidence: 99%

“…Dannhauser and Krausse used a combination of infrared radiation and voltage measurements across a pin diode to extract the injection dependence of the mobility sum [1], [2]. Similarly, Neuhaus et dependence of the mobility sum [7].…”

Section: Introductionmentioning

confidence: 99%

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A Contactless Method for Determining the Carrier Mobility Sum in Silicon Wafers

Rougieux

Zheng

Thiboust

et al. 2012

IEEE J. Photovoltaics

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Abstract-In this paper, we present a new method to determine the simultaneous injection and temperature dependence of the sum of the majority and minority carrier mobilities in silicon wafers. The technique is based on combining transient and quasi-steadystate photoconductance measurements. It does not require a full device structure or contacting but only adequate surface passivation. The mobility dependence on both carrier injection level and temperature, as measured on several test samples, is discussed and compared with well-known mobility models. The potential of this method to measure the impact of dopant concentration, compensation ratio, injection level, and temperature on the mobility is demonstrated.

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Prediction of the open-circuit voltage of solar cells from the steady-state photoconductance

Cuevas

Sinton²

1997

Prog. Photovolt: Res. Appl.

130

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Die abhängigkeit der trägerbeweglichkeit in silizium von der konzentration der freien ladungsträger—I

Cited by 108 publications

References 15 publications

Measurement and Parameterization of Carrier Mobility Sum in Silicon as a Function of Doping, Temperature and Injection Level

Measurement and Parameterization of Carrier Mobility Sum in Silicon as a Function of Doping, Temperature and Injection Level

A Contactless Method for Determining the Carrier Mobility Sum in Silicon Wafers

Prediction of the open-circuit voltage of solar cells from the steady-state photoconductance

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