Die abhängigkeit der trägerbeweglichkeit in silizium von der konzentration der freien ladungsträger—II

Krausse, J.

doi:10.1016/0038-1101(72)90132-3

Cited by 94 publications

(28 citation statements)

References 4 publications

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“…Fig. 4 shows the resulting mobility sum and the mobility models of Dannhauser-Krausse [1], [2], Klaassen [17], [18], and DorkelLeturcq [19]. Within error, the measured mobility and the data from Dannhauser [see Fig.…”

Section: A Accuracy Of the Methodsmentioning

confidence: 99%

“…It is well known that the mobility decreases with both carrier injection level [1], [2] and sample temperature [3]. Since solar cells often operate under a wide range of injection levels and temperatures, it is, thus, fundamental to determine the impact of those parameters on the carrier mobility.…”

Section: Introductionmentioning

confidence: 99%

“…Dannhauser and Krausse used a combination of infrared radiation and voltage measurements across a pin diode to extract the injection dependence of the mobility sum [1], [2]. Similarly, Neuhaus et dependence of the mobility sum [7].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A Contactless Method for Determining the Carrier Mobility Sum in Silicon Wafers

Rougieux

Zheng

Thiboust

et al. 2012

IEEE J. Photovoltaics

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Abstract-In this paper, we present a new method to determine the simultaneous injection and temperature dependence of the sum of the majority and minority carrier mobilities in silicon wafers. The technique is based on combining transient and quasi-steadystate photoconductance measurements. It does not require a full device structure or contacting but only adequate surface passivation. The mobility dependence on both carrier injection level and temperature, as measured on several test samples, is discussed and compared with well-known mobility models. The potential of this method to measure the impact of dopant concentration, compensation ratio, injection level, and temperature on the mobility is demonstrated.

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Section: A Accuracy Of the Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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A Contactless Method for Determining the Carrier Mobility Sum in Silicon Wafers

Rougieux

Zheng

Thiboust

et al. 2012

IEEE J. Photovoltaics

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“…As a starting point, we adopt the parameterization of μ sum in the WCT-100 software used in the analysis of QSSPC lifetime measurements [17], [18].This expression is based on Danhauser and Krause's data [9], [10], who measured the mobility sum as a function of carrier injection at room temperature. The expression is .…”

Section: Empirical Model For the Mobility Summentioning

confidence: 99%

Measurement and Parameterization of Carrier Mobility Sum in Silicon as a Function of Doping, Temperature and Injection Level

Zheng

Rougieux

Macdonald

et al. 2014

IEEE J. Photovoltaics

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Abstract-Based on contactless photoconductance measurements of silicon wafers, we have determined the sum of the electron and hole mobilities as a function of doping, excess carrier concentration, and temperature. By separately analyzing those three functional dependences, we then develop a simple mathematical expression to describe the mobility sum as a function of carrier injection wafer doping and temperature from 150 to 450 K. This new parameterization also provides experimental validation to Klaassen's and Dorkel-Leturcq's mobility models in a range of temperatures.Index Terms-Charge carrier mobility, mobility sum, silicon, temperature and injection dependent.

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“…A fit to Dannhauser and Krause's mobility sum measurements [20][21][22] is commonly used to convert photo-conductance data into excess carrier density for injection-dependent lifetime measurements [19].…”

Section: Study Of the Lifetime Degradation In Compensated Silicon Wafersmentioning

confidence: 99%

Impact of compensation on the boron and oxygen-related degradation of upgraded metallurgical-grade silicon solar cells

Forster¹,

Wagner

Degoulange³

et al. 2014

Solar Energy Materials and Solar Cells

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Abstract:This paper deals with the impact of dopant compensation on the degradation of carrier lifetime and solar cells performance due to the boron-oxygen defect. The boron-oxygen defect density evaluated by lifetime measurements before and after degradation is systematically found proportional to the total boron concentration, showing that compensation cannot reduce light-induced degradation. This result is confirmed by a comparison of upgraded-metallurgical grade silicon solar cells having identical boron, oxygen and carbon but different compensation levels and in which the degradation is found more severe when the compensation is stronger.

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Die abhängigkeit der trägerbeweglichkeit in silizium von der konzentration der freien ladungsträger—II

Cited by 94 publications

References 4 publications

A Contactless Method for Determining the Carrier Mobility Sum in Silicon Wafers

A Contactless Method for Determining the Carrier Mobility Sum in Silicon Wafers

Measurement and Parameterization of Carrier Mobility Sum in Silicon as a Function of Doping, Temperature and Injection Level

Impact of compensation on the boron and oxygen-related degradation of upgraded metallurgical-grade silicon solar cells

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