Abstract:Volatile organic materials, in argon as a carrier gas, can be deposited as thin insulating films after polymerisation in an r.f. plasma discharge. When deposited on n-type silicon with evaporated gold electrodes, diodes of the Metal -Insulator -Semiconductor type can be produced. Using toluene as the monomer, these can be made with high reverse bias breakdown fields in the thin-f ilm insulator ( 5 0 -2 5 0 0 V/pn). The conduction appears to be determined by charge injection processes. The thin film capacitance… Show more
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