DIBL–Compensated Extraction of the Channel Length Modulation Coefficient in MOSFETs

Hiblot, Gaspard

doi:10.1109/ted.2018.2853699

Cited by 10 publications

(5 citation statements)

References 18 publications

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“…The reduction in the pinch-off voltage of TFT-100 indicates that the prepared TFTs can be operated at a low voltage of V DS = 2 V. The MgO film with 100% oxygen exhibited a superior crystallinity and higher dielectric constant than those with 66% oxygen; thus resulting in a lower operating voltage. In figure 7(c), the I DS increased with V DS after V DS exceeding 6 V; that is the phenomenon of channel length modulation, which confirms the channel layer is easily depleted owing to a large dielectric constant and compensated oxygen vacancy in the 100% oxygen [37]. In the linear region, I DS increased with V DS , and the drain-source resistance (R DS ) can be calculated from / R dI dV .…”

Section: Resultsmentioning

confidence: 77%

Improving the electrical properties of transparent ZnO-based thin- film transistors using MgO gate dielectric with various oxygen concentrations

Hwang,

Hsu

2023

Nanotechnology

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Zinc oxide (ZnO)-based thin-film transistors (TFTs) have attracted increasing attention towards flat-panel displays as alternatives to silicon-based TFTs due to their transparency to visible light. Magnesium oxide (MgO) has a wide bandgap (7.8 eV) and high dielectric constant (k). This leads to the development of TFTs using MgO as a gate oxide layer, which can significantly reduce the operating voltage. However, the electrical properties and dielectric constant of MgO are determined from the percentage of oxygen in MgO. In this study, a MgO gate-oxide was deposited on ZnO by magnetron sputtering at various oxygen concentrations (0, 66, and 100%) to fabricate TFTs. With an increase in the oxygen concentration, the oxygen vacancies of MgO were compensated, thereby improving the crystallinity and enhancing the dielectric constant from 6.53 to 12.9 for the oxygen concentrations of 0 and 100%. No pinch-off (saturation) behavior was observed in the TFTs with 0% oxygen; however, the pinch-off voltages were significantly reduced to 17 and 2 V in the TFTs with 66 and 100% oxygen, respectively; hence, the TFT-100 could be operated at a low operating voltage (2V). With an increase in oxygen from 0 to 100%, the threshold voltage and trap-state density significantly decreased from -159 V and 1.6 × 1018 cm−3 to -31.4 V and 6.5 × 1016 cm−3, respectively. The TFTs with 0% oxygen exhibited a higher field-effect mobility of 12 cm2/V-s due to the uncompensated oxygen vacancy in ZnO, which had a higher electron concentration. After introducing oxygen atoms, the field-effect mobility decreased to 0.16 cm2/V-s in the TFTs with 66% oxygen, which can be attributed to the compensated oxygen vacancy and lower electron concentration. In contrast, the field-effect mobility increased to 1.88 cm2/V-s for the TFTs with 100% oxygen due to the enhanced dielectric constant and crystallinity of MgO.

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Section: Resultsmentioning

confidence: 77%

Improving the electrical properties of transparent ZnO-based thin- film transistors using MgO gate dielectric with various oxygen concentrations

Hwang,

Hsu

2023

Nanotechnology

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“…The DIBL factor σ is a small-signal parameter that affects the intrinsic voltage gain of the common source amplifier. Figure 6 presents a schematic to determine the commonsource intrinsic gain (CSIG) and the equivalent small-signal model [17] of the amplifier. In saturation, the use of the transconductance-to-current characteristics (11) and ( 12) yields the CSIG in (23).…”

Section: Extraction Of Drain-induced Barrier-lowering Factor (σ)mentioning

confidence: 99%

Bridging the Gap between Design and Simulation of Low-Voltage CMOS Circuits

Adornes

Neto

Schneider

et al. 2022

JLPEA

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This work proposes a truly compact MOSFET model that contains only four parameters to assist an integrated circuits (IC) designer in a design by hand. The four-parameter model (4PM) is based on the advanced compact MOSFET (ACM) model and was implemented in Verilog-A to simulate different circuits designed with the ACM model in Verilog-compatible simulators. Being able to simulate MOS circuits through the same model used in a hand design benefits designers in understanding how the main MOSFET parameters affect the design. Herein, the classic CMOS inverter, a ring oscillator, a self-biased current source and a common source amplifier were designed and simulated using either the 4PM or the BSIM model. The four-parameter model was simulated in many sorts of circuits with very satisfactory results in the low-voltage cases. As the ultra-low-voltage (ULV) domain is expanding due to applications, such as the internet of things and wearable circuits, so is the use of a simplified ULV MOSFET model.

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“…Regarding g ddo response, two opposite tendencies for the drain current occur for shorter gate lengths. First, short-channel effects (SCEs), such as drain-induced barrier lowering (DIBL) and the channel-length modulation (CML) effect, affect the output characteristics, causing the drain current to increase with drain bias and lowering the transistor output resistance [14]. Experiments reveal that DIBL increases with temperature [15].…”

Section: Thermal Impedance Characterization and Modelingmentioning

confidence: 99%

Gate Length-Dependent Thermal Impedance Characterization of PD-SOI MOSFETs

González

Cabrera

Lázaro

2022

IEEE Trans. Electron Devices

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Thermal impedance is required to describe static and fast dynamic thermal behavior in silicon-oninsulator (SOI) devices. This study presents an empirical physical model, which accounts for gate length, for calculating the thermal impedance of multi-finger partially depleted (PD) SOI MOSFETs at room temperature. For the first time, the parameters of the model are obtained from measurements of ac conductance and the characteristic thermal frequency determination. The model shows decreasing thermal resistance and linearly augmented thermal capacitance with increasing gate length from 0.18 to 2.50 μm. Thus, thermal time constants of ∼760 ns, extracted from a variety of gate lengths, are correctly predicted.

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DIBL–Compensated Extraction of the Channel Length Modulation Coefficient in MOSFETs

Cited by 10 publications

References 18 publications

Improving the electrical properties of transparent ZnO-based thin- film transistors using MgO gate dielectric with various oxygen concentrations

Improving the electrical properties of transparent ZnO-based thin- film transistors using MgO gate dielectric with various oxygen concentrations

Bridging the Gap between Design and Simulation of Low-Voltage CMOS Circuits

Gate Length-Dependent Thermal Impedance Characterization of PD-SOI MOSFETs

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