Diamond with nitrogen:  states, control, and applications

Zheng, Yuting; Li, Chengming; Liu, Jinlong; Wei, Junjun; Ye, Haitao

doi:10.1080/26941112.2021.1877021

Cited by 31 publications

(10 citation statements)

References 155 publications

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“…On the other hand, some of nitrogen defects are able to decrease lattice stresses when heavy atoms are embedded into diamond. The results of modeling [42,43] displayed a formation of B1-defects (4 nitrogen atoms associated with vacancy) which decrease the lattice energy comparative to perfect crystal. The effect is of (1-4) eV per one defect and varies as dependent on the amounts of nitrogen and hydrogen in crystal.…”

Section: Xrf Xeol Tem and Raman Resultsmentioning

confidence: 99%

X-ray Exited Optical Luminescence of Eu in Diamond Crystals Synthesized at High-pressure High-temperature

Лебедев¹,

Shakhov²,

Vul³

et al. 2022

Preprint

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Diamond powders with inclusions of europium atoms were synthesized at high pressure (7.7 GPa) and temperature (1800oC) from a mixture of pentaerythritol, C(CH2OH)4, and pyrolyzate of diphthalocyanine (C64H32N16Eu) served as a special precursor. In prepared diamonds by X-ray fluorescence spectroscopy, we have found the concentration of Eu atoms of 51±5 ppm that is by two orders of magnitude greater than that in known natural and synthetic diamonds. X-ray diffraction, SEM, X-ray exited optical luminescence, Raman and IR spectroscopy have confirmed the formation of diamond monocrystals of high quality with em-bedded Eu atoms and a nitrogen content of ~500 ppm. Numerical simulation has allowed us de-termine the energy cost of 5.8 eV needed for the incorporation of a single Eu atom with adjacent vacancy into growing diamond crystal (528 carbons).

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Section: Xrf Xeol Tem and Raman Resultsmentioning

confidence: 99%

X-ray Exited Optical Luminescence of Eu in Diamond Crystals Synthesized at High-pressure High-temperature

Лебедев¹,

Shakhov²,

Vul³

et al. 2022

Preprint

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show abstract

“…Typical downward surface band bending was found for BDD, and there was larger band bending for diamond surfaces modified by hydrogen, which was totally opposite to the trend for the oxygen-modified surface with PEA. However, for the n-type diamond surface, a significant upward band bending was concluded Figure illustrates the energy band diagram for the H-BDD–HNNA/vacuum condition in an applied electric field.…”

Section: Resultsmentioning

confidence: 99%

“…However, for the ntype diamond surface, a significant upward band bending was concluded. 68 Figure 8 illustrates the energy band diagram for the H-BDD−HNNA/vacuum condition in an applied electric field. For the H-terminated BDD with various crystal orientation surfaces, the maximal NEA values obtained are in the range of −0.9 to −1.0 eV or even larger.…”

Section: Fee Performance Of Bdd−hnnasmentioning

confidence: 99%

Vertically Aligned Boron-Doped Diamond Hollow Nanoneedle Arrays for Enhanced Field Emission

Zheng

Liu

Wang

et al. 2022

ACS Appl. Nano Mater.

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Lower turn-on field (E TO) and threshold field (E THR), as well as a higher current density, are desired characteristics of materials and structures for field emission (FE) applications. In this work, the properties of a boron-doped diamond (BDD) hollow nanoneedle array (HNNA) structure were remarkably enhanced through surface state modulation. By designedly controlling the surface roughness and boron concentration of the BDD film, a uniform and dense HNNA with a high aspect ratio (∼21.3) was constructed by applying O2 + Cl2 inductively coupled plasma reactive ion etching (ICP-RIE) for an optimal duration (90 min). Although the maximum HNNA density (∼5.5 × 106 mm–2) is produced at a shorter duration, the overall FE performance is even worse than that of the BDD film without an HNNA, arising from the field shielding effect and incomplete elimination of defective needles. The finally formed Actiniaria tentacle-like HNNA structure is associated with the masking role of oxidized Si and amorphous carbon on the top edge of the needle embryos, resulting from the electric field edge effect and Si supply accompanying the substrate. Meanwhile, the sp2 carbon generated by ICP-RIE on the surface of the as-etched HNNA promotes the FE, showing a minimum E TO of 0.11 V/μm. After moderate hydrogen plasma treatment, owing to the negative electron affinity (NEA) of C–H on p-type BDD with downward band bending of the conduction band minimum and local electric field enhancement induced by the hollow nanostructure, the hydrogen-terminated BDD–HNNA shows excellent FE stability and a linear Fowler–Nordheim relation with a lower E TO of 0.38 V/μm and E THR of 2.21 V/μm and a desirable current density of 6532 μA/cm2 at 3.75 V/μm. The comprehensive FE properties of the surface-modulated high-quality BDD–HNNA exceed those of the vast majority of other conventional or popular nanostructural counterparts.

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“…This color is attributed to the color centers of the vacancies. HPHT-grown diamond has nitrogen as single substitutional atoms in the lattice, and this kind of incorporation leads to the characteristic yellow color of these synthetic stones [ 22 ].…”

Section: Discussionmentioning

confidence: 99%

Surface Morphology and Spectroscopic Features of Homoepitaxial Diamond Films Prepared by MWPACVD at High CH4 Concentrations

et al. 2022

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Single crystal diamond (SCD) is a promising material to satisfy emerging requirements of high-demand fields, such as microelectronics, beta batteries and wide-spectrum optical communication systems, due to its excellent optical characteristics, elevated breakdown voltage, high hardness and superior thermal conductivity. For such applications, it is essential to study the optically active defects in as-grown diamonds, namely three-dimensional defects (such as stacking faults and dislocations) and the inherent defects arising from the cultivation method. This paper reports the growth of SCD films on a commercial HPHT single-crystal diamond seed substrate using a 2.45 GHz microwave plasma-assisted chemical vapor deposition (MWPACVD) technique by varying the methane (CH4) gas concentration from 6 to 12%, keeping the other parameters constant. The influence of the CH4 concentration on the properties, such as structural quality, morphology and thickness, of the highly oriented SCD films in the crystalline plane (004) was investigated and compared with those on the diamond substrate surface. The SCD film thickness is dependent on the CH4 concentration, and a high growth rate of up to 27 µm/h can be reached. Raman spectroscopy, high-resolution X-ray diffractometry (HRXRD), scanning electron microscopy (SEM), surface profilometry and optical microscopic analyses showed that the produced homoepitaxial SCD films are of good quality with few macroscopic defects.

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Diamond with nitrogen: states, control, and applications

Cited by 31 publications

References 155 publications

X-ray Exited Optical Luminescence of Eu in Diamond Crystals Synthesized at High-pressure High-temperature

X-ray Exited Optical Luminescence of Eu in Diamond Crystals Synthesized at High-pressure High-temperature

Vertically Aligned Boron-Doped Diamond Hollow Nanoneedle Arrays for Enhanced Field Emission

Surface Morphology and Spectroscopic Features of Homoepitaxial Diamond Films Prepared by MWPACVD at High CH4 Concentrations

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