Diamond thin film growth by pulsed microwave plasma at high power density in a CH4–H2 gas mixture

Role of silicon on the growth mechanisms of CNx and SiCN thin films by N2/CH4 microwave plasma assisted chemical vapour deposition

“…The growth of carbon nitride films is carried out in a MPACVD reactor, which is described elsewhere [15]. The reactor is a cylinder of an inner diameter of 28 cm and a height of 24 cm.…”

Preliminary Synthesis of Carbon Nitride Thin Films by N2/CH4 Microwave Plasma Assisted Chemical Vapour Deposition: Characterisation of the Discharge and the Obtained Films

“…The growth of carbon nitride films is carried out in an MPACVD reactor which is described elsewhere 16. The gas mixture is composed of N 2 and CH 4 in various ratios.…”

Study of polycrystalline diamond deposition by continuous and pulsed discharges

“…More recently the authors of refs. [12][13][14] have found improvement of diamond quality and occasionally higher deposition rates under optimised values of the modulation parameters. Specifically, De Poucques et al [13] carried out experiments that highlight contradictory results dealing with PW mw processes and suggested indeed that under the working PW conditions the plasma ball in the discharge tube must be localized in the center and not shifted toward the tube wall [10] in order to ensure that the reactor works as resonant cavity.…”

“…The growth of diamond-based materials as single- [9], poly- [10][11][12][13][14] and nano-crystalline diamond films [8,15] by means of PW microwave (mw) plasmas has been and is still a hot research topic. Several explanations of the obtained results have been put forward.…”

“…Analogously, the papers of refs. [10,12] maintained the same peak power, but without keeping constant the deposition temperature; conversely several papers [3,8,[10][11][12][13][14][15] chose to use the same average mw power in PW and CW regimes.…”