1992
DOI: 10.1351/pac199264050751
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Diamond synthesis by thermal-plasma CVD (chemical vapor deposition)

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Cited by 14 publications
(2 citation statements)
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“…A number of methods for diamond film growth have been developed, but the main difference between them is how the gas-phase carbon-containing precursor molecules are activated. The new methodologies comprise d.c. plasma, 32,33 radio frequency (RF) plasma, 34,35 d.c. plasma jet, 36,37 microwave plasma jet, 38 electron cyclotron resonance (ECR) microwave plasma, 39,40 and combustion (oxyacetylene or plasma torches) flame synthesis. [41][42][43][44][45][46] Microwave (MW) plasma and hot filament (HF) CVD growth rates are typically between 0.1 and 10 mm h 21 , while values in the range 50-1000 mm h 21 can be achieved by arc-jet and combustion flame synthesis.…”
Section: The Chemical Vapor Deposition Processmentioning
confidence: 99%
“…A number of methods for diamond film growth have been developed, but the main difference between them is how the gas-phase carbon-containing precursor molecules are activated. The new methodologies comprise d.c. plasma, 32,33 radio frequency (RF) plasma, 34,35 d.c. plasma jet, 36,37 microwave plasma jet, 38 electron cyclotron resonance (ECR) microwave plasma, 39,40 and combustion (oxyacetylene or plasma torches) flame synthesis. [41][42][43][44][45][46] Microwave (MW) plasma and hot filament (HF) CVD growth rates are typically between 0.1 and 10 mm h 21 , while values in the range 50-1000 mm h 21 can be achieved by arc-jet and combustion flame synthesis.…”
Section: The Chemical Vapor Deposition Processmentioning
confidence: 99%
“…They implied that an enhancement in gas phase dissociation near ~e substrate was the cause for the increased deposition rate. [61] Conversely, negative-biasing of the substrate has been used in low pressure, microwave reactors to enhance and control the nucleation of CVD diamond. [62,63] We have conducted preliminary experiments to addresses the secondary discharge method as a means of augmenting the deposition rate while maintaining a high degree of film quality.…”
Section: Discharge Induced Nonequilibrium Plasma Chemistrymentioning
confidence: 99%