Diamond Sensors Durable for Continuously Monitoring Intense Vacuum Ultraviolet Radiation

Hayashi, Kazushi; Tachibana, Takeshi; Kawakami, Nobuyuki; Yokota, Yoshihiro; Kobashi, Koji; Ishihara, Hideaki; Uchida, Kôji; Nippashi, Kenji; Matsuoka, Mikihiko

doi:10.1143/jjap.44.7301

Cited by 17 publications

(11 citation statements)

References 24 publications

(22 reference statements)

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“…Therefore, the diamond UV photodetector, different from existing UV detectors, is capable of directly detecting UV without the aid of an optical filter (less durable UV radiation) that blocks light (wavelength: 227 nm or longer) other than UV. (2)(3)(4) The diamond UV photodetectors used HOD films made by Kobe Steel, Ltd. (5)(6)(7) The HOD films were produced on silicon (001) substrates by microwave plasma chemical vapor deposition (CVD) with bias-enhanced nucleation (BEN) treatment. The HOD films consisted of azimuthally oriented (001) facets with typical grains from 1 to 3 µm sizes and a thickness of 10 µm.…”

Section: Methodsmentioning

confidence: 99%

Characterization of Photoconductive Diamond Detectors - Candidate Vacuum Ultraviolet Radiation and Extreme Ultraviolet Radiation Light Source Detectors for Lithography -

2010

Sensors and Materials

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Key words: photoconductive diamond detector, vacuum ultraviolet (VUV) radiation, extreme ultraviolet (EUV) radiation, VUV/EUV radiation light source detectors for lithographyThe characteristics of an ultraviolet (UV) and vacuum ultraviolet (VUV) radiation photodetector with a photoconductive highly oriented diamond (HOD) film were evaluated using continuous light sources (a low-pressure mercury lamp and a xenon excimer lamp) that mainly emit light in the UV range. It was confirmed that the change in the spectral responsivity of the photodetector is extremely limited upon continuous UV radiation. In this report, the results of the evaluation of the characteristics of the UV photodetector with a photoconductive diamond film (hereafter, diamond UV photodetector) using continuous light sources are reported. We also found that the diamond UV photodetector has characteristics enabling its use as a photodetector for ArF excimer lasers and extreme ultraviolet (EUV) light sources, as a result of the evaluation using a light source employed in lithography. The results are also described. The evaluation of the diamond UV photodetector using an ArF excimer laser revealed that it can detect a laser with a pulse width of 5 ns. Also, good linearity between the pulse energy and the output was observed for pulse energies of 1-100 µJ/cm 2 . By the measurement of the spectral responsivity to synchrotron radiation, the diamond UV photodetector was found to have high spectral responsivity in the wavelength range of 10-33 nm. According to the results given above, the diamond UV photodetector has sufficient time responsiveness (follow-up performance) to enable the measurement of ArF excimer lasers and sufficient spectral responsivity to detect light in the EUV region, suggesting its use as a photodetector of light sources used in lithography.

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Section: Methodsmentioning

confidence: 99%

Characterization of Photoconductive Diamond Detectors - Candidate Vacuum Ultraviolet Radiation and Extreme Ultraviolet Radiation Light Source Detectors for Lithography -

2010

Sensors and Materials

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“…Thin-film organic polymer photo-transistors which combine light detection with signal magnification have already been realized [18]. Recently, Lee et al reported the fabrication of photosensitive solution-based IGZO single-walled carbon nanotubes (SWNT) blend TFTs [19]. By blending the SWNTs, they achieved significantly larger photo responsivity, as compared to conventional solution-based IGZO TFTs.…”

Section: Introductionmentioning

confidence: 99%

A Deep UV Sensitive ${\rm Ta}_{2}{\rm O}_{5}/{\rm a-IGZO}$ TFT

et al. 2011

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The authors report the fabrication of a deep-ultraviolet (deep-UV) sensitive a-IGZO thin-film-transistor (TFT) with a Ta 2 O 5 gate dielectric. It was found that carrier mobility, threshold voltage and subthreshold swing were 48.5 cm 2 Vs, 1.25 V and 0.49 V/decade, respectively, when measured in dark. It was also found that measured current increased from 1 5 10 9 A to 5 56 10 5 A, as we illuminated the sample with = 250 nm UV light when V G was biased at 0 V. Furthermore, it was found that deep-UV-to-visible rejection ratio could reach 1 0 10 6 for the fabricated Ta 2 O 5 /a-IGZO TFT.Index Terms-a-IGZO, solar-blind ultraviolet (UV) photodetctor, Ta 2 O 5 , thin-film-transistor (TFT).

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“…This is an attractive scheme because of its simplicity, reliability, and efficiency. There has been continuous effort in such research about wide gap materials involving ZnO, GaN, and diamond [1][2][3][4][5][6][7][8][9][10][11][12]. Some of the other most prominent candidates are fluorides [13,14].…”

Section: Introductionmentioning

confidence: 99%

Ultraviolet photoconductive detector using CeF<inf>3</inf> thin film grown by pulsed laser deposition

Tabata

Ichikawa

Ono

et al. 2009

2009 Conference on Lasers &Amp; Electro Optics &Amp; The Pacific Rim Conference on Lasers and Electro-Optics

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Diamond Sensors Durable for Continuously Monitoring Intense Vacuum Ultraviolet Radiation

Cited by 17 publications

References 24 publications

Characterization of Photoconductive Diamond Detectors - Candidate Vacuum Ultraviolet Radiation and Extreme Ultraviolet Radiation Light Source Detectors for Lithography -

Characterization of Photoconductive Diamond Detectors - Candidate Vacuum Ultraviolet Radiation and Extreme Ultraviolet Radiation Light Source Detectors for Lithography -

A Deep UV Sensitive ${\rm Ta}_{2}{\rm O}_{5}/{\rm a-IGZO}$ TFT

Ultraviolet photoconductive detector using CeF<inf>3</inf> thin film grown by pulsed laser deposition

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