Diamond Schottky-pn diode with high forward current density and fast switching operation

Abstract

We fabricated a diamond diode, namely a Schottky-pn diode (SPND), which is composed of a fully depleted n-type active layer sandwiched between a highly doped p-type layer and a Schottky metal layer. The SPND has superior characteristics that overcome the weak points of both a Schottky barrier diode and a pn diode. That is, the SPND showed high current density (over 4000 A/cm2) with low specific resistance (0.4 mΩ cm2) at a forward bias of 6 V while maintaining a high rectification ratio of ∼1010. Moreover, the SPND showed extremely fast turn-off speed of nanosecond order.

Atomically flat diamond (100) surface formation by anisotropic etching of solid-solution reaction of carbon into nickel

“…On the basis of the cross-sectional image of the pit shown Fig. 2, the etching depth of the diamond was approximately 260 nm, similar to that reported previously [4].…”

“…Diamond has superior physical and electronic properties, making it a wide-bandgap semiconductor material for next-generation high-power, quantum, bio/chemical electronic, and optoelectronic devices [1][2][3][4][5][6][7][8][9][10][11]. The fabrication of these devices requires diamond-etching processes.…”

Single crystal diamond membranes for nanoelectronics

“…It exhibits diodelike behaviour with a forward threshold voltage of ~ 10 V with ~ mA (~ 3A/cm 2 ) current, and a negligible current (~1×10 -7 A/cm 2 ) under a reverse bias of > 40V (figure 3c). This leads to an extremely high rectification ratio of ~ 10 4 (semi log I-V plots are shown in SI) which is ideal for diode fabrication [26][27] . This value is comparable to bulk diamond devces 23 .…”

Device Design of Diamond Schottky-pn Diode for Low-Loss Power Electronics

“…17,18) Figure 1 shows the basic structure of the diamond SPND. The diamond SPND is composed of a lightly P-doped n-type layer sandwiched between a highly boron (B)-doped p-type layer and a Schottky metal layer.…”