Diamond Schottky barrier diodes fabricated on sapphire-based freestanding heteroepitaxial diamond substrate

Chemical Vapor Deposition Single‐Crystal Diamond: A Review

“…A Schottky diode fabricated on sapphire base substrate was demonstrated by Kwak et al with an ideality factor of 1.4 and a maximum breakdown field of 1.1 MV cm −1 . [ 180 ] Arnault et al have successfully fabricated lateral Schottky diodes from Ir/SrTiO 3 /Si(100) substrate and obtained I – V characteristics evidenced a yield of working diodes equal to 92% (on the same substrate of 7 × 7 mm 2 ), close to that obtained for diodes on homoepitaxial films. To reduce the dislocation density, the metal impurity‐incorporated buffer layer was integrated to fabricate pseudovertical Schottky diodes by Sittimart et al [ 181 ] The rectification ratio exceeds eight orders of magnitude and the breakdown field strength was 1.7 MV cm −1 .…”

“…More recently, to fabricate Schottky diodes, two boron‐doped p+ and p− overlayers, both 1 μm thick, were grown on this commercial heteroepitaxial diamond with boron concentrations of 1 × 10 20 and 1 × 10 16 boron atoms per cm 3 , respectively. [ 180 ] Diode performances were significantly affected by dislocations, with a reduced breakdown field. Further, improvements of the heteroepitaxial material are necessary.…”

Electrical Characteristics of Metal–Insulator Diamond Semiconductor Schottky Barrier Diode Grown on Heteroepitaxial Diamond Substrate

“…Figure 7 shows the energy distribution profiles of the interface state density of each device which used 105 um Schottky diameter MS and MIS SBD, representatively. The n(V ) can be derived as Equation (4). And the expression for interface state density Equation (5) as deduced by Card and Rhoderick, [31] where ε i , ε s , δ, W D are permittivity of the interfacial layer, permittivity of semiconductor, thickness of insulator layer, and width of the depletion region, respectively.…”

“…For these reasons, several previous studies on diamond power devices have been reported, such as field-effect transistors (FET) and Schottky barrier diodes (SBDs). [3,4] In particular, SBDs are basic power devices in modern electronic applications owing to their fast reverse coverage time, turn-on voltage, and the possibility of high-temperature operation. [5,6] In addition, diamond SBDs with a high breakdown voltage of up to 10 kV [7] and a high forward current of more than 20 A [8] have been reported.…”

“…The effects of the HfO 2 interlayer on the electrical properties of the SBDs are investigated using current-voltage (I-V curve) and capacitance-voltage (C-V curve) characteristics at room temperature. Compared with the metal-semiconductor (MS) SBD, the metal-insulator-semiconductor (MIS) SBD exhibited a10 4 A lower reverse leakage current. The Schottky barrier height in the MIS SBD is almost 0.2 eV higher than in the MS SBD.…”