2001
DOI: 10.1016/s0925-9635(00)00518-5
|View full text |Cite
|
Sign up to set email alerts
|

Diamond photodetectors for next generation 157-nm deep-UV photolithography tools

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

1
17
0

Year Published

2002
2002
2019
2019

Publication Types

Select...
7
1

Relationship

0
8

Authors

Journals

citations
Cited by 40 publications
(18 citation statements)
references
References 8 publications
1
17
0
Order By: Relevance
“…The most immediate conclusion to be drawn from these plots is the way that each pulse is detected accurately on the nanosecond timescale, with no evidence of charge build up within the structure. This is in agreement with our previous observations on pointsource detectors [23,25,26], but is not typical for many other diamond detectors reported within the literature, which often take several seconds to reset. It is also apparent that each pixel is highly sensitive to light of this wavelength since the recorded output is of the order of 3 V. Array element eight can be seen to be less sensitive than the other elements within the array.…”
Section: Resultssupporting
confidence: 93%
See 1 more Smart Citation
“…The most immediate conclusion to be drawn from these plots is the way that each pulse is detected accurately on the nanosecond timescale, with no evidence of charge build up within the structure. This is in agreement with our previous observations on pointsource detectors [23,25,26], but is not typical for many other diamond detectors reported within the literature, which often take several seconds to reset. It is also apparent that each pixel is highly sensitive to light of this wavelength since the recorded output is of the order of 3 V. Array element eight can be seen to be less sensitive than the other elements within the array.…”
Section: Resultssupporting
confidence: 93%
“…Despite this promise, many examples of chemically vapour deposited (CVD) diamond-based detectors have failed to perform with commercially useful characteristics, with poor wavelength selectivity and prolonged turn-off times (charging) being the most common problems encountered. We have previously shown that careful device design along with the application of post-growth diamond defect passivation treatments can alleviate these problems and we have produced high performance detectors that are now produced commercially [3,23,25,26]. These point-source devices have found many uses in the detection of deep UV light within materials processing and environmental monitoring applications.…”
Section: Introductionmentioning
confidence: 99%
“…In particular, an interest in using 157 nm laser source in projection semiconductor lithography as a successor to 193 nm based systems was announced. [4][5][6] One of the most serious problems in realizing a 157 nm based system is the development of suitable optical materials for lenses and other optical components. For an all-refractive design of the 157 nm laser source, a second material other than CaF 2 is strongly required.…”
Section: Introductionmentioning
confidence: 99%
“…KMgF 3 is an important material with a wide variety of technological applications, such as scintillator [1,2], thermoluminescent dosimeter, and window materials in the ultra-violet (UV) and vacuum-ultra-violet (VUV) wavelength region [3,4]. Recently, the usefulness of transition-metal (TM) ions doped KMgF 3 crystals as the active host medium in tunable solid state lasers is well established.…”
Section: Introductionmentioning
confidence: 99%