Diamond-Like Carbon (DLC) Liner: A New Stressor for P-Channel Multiple-Gate Field-Effect Transistors

Tan, Kian-Ming; Fang, Wei; Yang, Mingjie; Liow, Tsung-Yang; Lee, R.T.-P.; Balasubramanian, N.; Yeo, Yee-Chia

doi:10.1109/led.2008.923710

Cited by 13 publications

(8 citation statements)

References 10 publications

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“…1(b)], however, reduced the stress contribution from the DLC liner in this letter as compared to [9] where the higher I on enhancement is also due to higher DLC stress, shorter L G , and, possibly, compliance effect of silicon-oninsulator (SOI) substrates. Reference [10] demonstrated 34% I on enhancement for SOI FinFET with raised Si S/D (15 nm) and L G of 70 nm, but the higher enhancement is also due to higher DLC stress and shorter L G . Ge condensation of SiGe S/D [12] or increasing stress coupling of SiGe S/D using a wrap-around structure [13] contributed to ∼28% and ∼26% I on enhancements, respectively, which are higher than that due to the DLC reported here.…”

Section: Resultsmentioning

confidence: 99%

“…Ge condensation of SiGe S/D [12] or increasing stress coupling of SiGe S/D using a wrap-around structure [13] contributed to ∼28% and ∼26% I on enhancements, respectively, which are higher than that due to the DLC reported here. When comparing I on enhancement due to SiGe S/D [12] or DLC in planar and FinFET devices [10] at a given I off , the following additional factors should be considered: L G , SCE, series resistance, S/D elevation, Ge composition, channel surface orientation, and device topology affecting stress coupling.…”

Section: Resultsmentioning

confidence: 99%

“…e.g., diamond-like carbon (DLC) [9], [10]. The DLC liner stressor has been demonstrated experimentally on p-channel planar [9] and multiple-gate transistor [10] architectures without S/D stressors to provide enhanced device performance. The DLC has never been demonstrated on strained transistors with SiGe S/D stressors.…”

Section: Introductionmentioning

confidence: 99%

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Performance Benefits of Diamond-like Carbon Liner Stressor in Strained P-Channel Field-Effect Transistors With Silicon–Germanium Source and Drain

Tan

Yang

Fang

et al. 2009

IEEE Electron Device Lett.

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We report the first investigation of the impact of diamond-like carbon (DLC) high-stress liner on strained p-channel metal-oxide-semiconductor field-effect transistors (p-FETs) having silicon-germanium (SiGe) source-and-drain (S/D) stressor. The DLC exhibited a very high compressive stress of ∼5 GPa. At a fixed I off of 1 × 10 −7 A/μm, the DLC liner stressor contributed to a further 11% I on enhancement for p-FETs with Si 0.75 Ge 0.25 S/D. This is the first demonstration that further boost in device performance in a p-FET that is already strained using Si 0.75 Ge 0.25 S/D can be achieved with DLC liner stressor. Due to the extremely high intrinsic compressive stress of the DLC, a very small DLC thickness of ∼27 nm is sufficient for achieving significant strain effect and performance enhancement.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Performance Benefits of Diamond-like Carbon Liner Stressor in Strained P-Channel Field-Effect Transistors With Silicon–Germanium Source and Drain

Tan

Yang

Fang

et al. 2009

IEEE Electron Device Lett.

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“…In FinFETs, significant I Dsat enhancement can also be achieved using the SiN liner stressor [8]- [12]. In p-channel FinFETs (p-FinFETs), diamond-like carbon (DLC) liner stressor has been demonstrated for strain engineering [13], [16]. DLC has an intrinsic compressive stress of up to 10 GPa significantly greater than that of SiN and allows a higher channel stress to be induced for a given liner thickness.…”

Section: Introductionmentioning

confidence: 99%

Phase Change Liner Stressor for Strain Engineering of P-Channel FinFETs

Ding

Cheng

Koh

et al. 2013

IEEE Trans. Electron Devices

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A novel Ge 2 Sb 2 Te 5 (GST) liner stressor for enhancing the drive current in p-channel FinFETs (p-FinFETs) is demonstrated. When amorphous GST changes phase to crystalline GST (c-GST), the GST material contracts. This phenomenon is exploited for strain engineering of p-FinFETs. A GST liner stressor wrapping a p-FinFET can be shrunk or contracted to generate very high channel stress for drive current enhancement. Saturation drain current enhancement of ∼80% and linear drain current enhancement of ∼110% are observed for FinFETs with c-GST liner stressor over the control or unstrained FinFETs. The drain current enhancement is higher for 0°rotated FinFETs as compared with that of the FinFETs with 45°rotation, due to the orientation-dependent piezoresistance coefficients. The drain current enhancement increases with decreasing gate length. GST liner stressor could be a strain engineering option in sub-20-nm technology nodes. Index Terms-FinFET, Ge 2 Sb 2 Te 5 (GST), multigate FET, phase change, strain. Yinjie Ding (S'11) received the B.Eng. (Hons.) degree in electrical engineering from the National University of Singapore, Singapore, in 2009, where he is currently pursuing the Ph.D. degree in electrical engineering.He is working on strain engineering for advanced transistors.Ran Cheng (S'11) received the B.Eng. degree in electrical engineering from the National University of Singapore (NUS), Singapore, in 2009. She is currently pursuing the Ph.D. degree at NUS. Shao-Ming Koh (S'07) received the B.Eng. (Hons.) and Ph.D. degrees from the National University of Singapore, Singapore.He is currently with GLOBALFOUNDRIES, Singapore.

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“…INTRODUCTION With scaling of the silicon metal-oxide-semiconductor field-effect transistor (MOSFET) into sub-20 nm technology nodes, the conventional planar device structure would be replaced by the multi-gate or fin field-effect transistor (FinFET) device structure, which has excellent control of short-channel effects (SCEs). [1][2][3][4][5][6][7][8][9][10][11] To boost the switching speed or drive current of FinFETs, carrier mobilities may be enhanced by channel strain engineering. [4][5][6][7][8][9][10][11][12][13][14][15] Recently, a new liner stressor comprising Ge 2 Sb 2 Te 5 (GST) was reported for inducing strain in p-channel FinFETs, significantly increasing the hole mobility and drive current.…”

mentioning

confidence: 99%

Lattice strain analysis of silicon fin field-effect transistor structures wrapped by Ge2Sb2Te5 liner stressor

Ding

Cheng

et al. 2013

Journal of Applied Physics

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The local strain components in the source/drain (S/D) and channel regions of Si fin field-effect transistor (FinFET) structures wrapped around by a Ge2Sb2Te5 liner stressor were investigated for the first time using nano-beam diffraction. When the Ge2Sb2Te5 (GST) layer changes phase from amorphous to crystalline, it contracts and exerts a large stress on the Si fins. This results in large compressive strain in the S/D region of ⟨1¯10⟩-oriented Si FinFETs of up to −1.15% and −1.57% in the ⟨110⟩ (horizontal) and ⟨001⟩ (vertical) directions, respectively. In the channel region of the FinFETs under the metal gate, the GST contraction results in up to −1.47% and −0.61% compressive strain in the ⟨110⟩ and ⟨001⟩ directions, respectively. In the channel region, the ⟨110⟩ compressive strain is higher at the fin sidewalls and lower near the fin center, while the ⟨001⟩ compressive strain is lower at the sidewalls and higher near the center.

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Diamond-Like Carbon (DLC) Liner: A New Stressor for P-Channel Multiple-Gate Field-Effect Transistors

Cited by 13 publications

References 10 publications

Performance Benefits of Diamond-like Carbon Liner Stressor in Strained P-Channel Field-Effect Transistors With Silicon–Germanium Source and Drain

Performance Benefits of Diamond-like Carbon Liner Stressor in Strained P-Channel Field-Effect Transistors With Silicon–Germanium Source and Drain

Phase Change Liner Stressor for Strain Engineering of P-Channel FinFETs

Lattice strain analysis of silicon fin field-effect transistor structures wrapped by Ge2Sb2Te5 liner stressor

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