Diamond Electrochemical Devices

Yang, Nianjun

doi:10.1007/978-3-030-12469-4_8

Cited by 6 publications

(4 citation statements)

References 134 publications

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“…Synthetic boron-doped diamond (BDD) has attracted much attention in the electrochemical community due to its remarkable properties such as low background currents, high overpotential for oxygen and hydrogen evolution in aqueous electrolytes, high chemical inertness in aggressive media, etc. [1][2][3]. BDD is typically grown using chemical vapour deposition (CVD) [2], due to the ability to incorporate high levels of uncompensated boron into the diamond lattice such that metal-like conductivity is achieved.…”

Section: Introductionmentioning

confidence: 99%

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A Closed Bipolar Electrochemical Cell for the Interrogation of BDD Single Particles: Electrochemical Advanced Oxidation

Dettlaff,

Tully,

Wood

et al. 2024

Preprint

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A closed bipolar electrochemical cell containing two conductive boron-doped diamond (BDD) particles of size 250 – 350 um, produced by high-pressure high-temperature (HPHT) synthesis, has been used to demonstrate the applicability of single BDD particles for electrochemical oxidative degradation of the dye, methylene blue (MB). The cell is fabricated using stereolithography 3D printing and the BDD particles are located at either end of a solution excluded central channel. Platinum wire electrodes placed in each of the two outer solution compartments are used to drive electrochemical reactions at the two BDD particles, which, under bipolar conditions do not require direct electrical connection to a potential source. Experiments using ultra high-performance liquid chromatography coupled with mass spectrometry (UHPLC-MS) show that the anodic pole BDD particle is able to electrochemically remove > 99% of the dye (originally present at 1 x 10-4 M) to undetectable UHPLC-MS products in 600 s. Monitoring of the time dependant change in MB peak area, from the UHPLC chromatograms, enables a pseudo first order rate constant of 0.54 min-1 to be determined for MB removal. Given the large scale at which such particles can be produced (tonnes), such data bodes well for scale up opportunities using HPHT-grown BDD particles, where the particles can be assembled into high surface area electrode formats.

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Section: Introductionmentioning

confidence: 99%

“…[1][2][3]. BDD is typically grown using chemical vapour deposition (CVD) [2], due to the ability to incorporate high levels of uncompensated boron into the diamond lattice such that metal-like conductivity is achieved. However, CVD suffers from relatively slow growth rates and poor scalability.…”

Section: Introductionmentioning

confidence: 99%

A Closed Bipolar Electrochemical Cell for the Interrogation of BDD Single Particles: Electrochemical Advanced Oxidation

Dettlaff,

Tully,

Wood

et al. 2024

Preprint

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“…The inclusion of a boron dopant in the diamond crystal structure of sp 3 hybridization creates very interesting p-type semiconductor materials known as boron doped diamond (BDD) electrodes. BDD electrodes show excellent electrochemical properties [ 7 , 8 , 9 ]. Compared to other materials used in electroanalytical measurements (Au, Pt, or GC), they are characterized by a wide range of potentials in aqueous and non-aqueous environments, low capacitive current, and microstructural stability at extreme cathode and anodic potentials.…”

Section: Introductionmentioning

confidence: 99%

Good Choice of Electrode Material as the Key to Creating Electrochemical Sensors—Characteristics of Carbon Materials and Transparent Conductive Oxides (TCO)

2021

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The search for new electrode materials has become one of the goals of modern electrochemistry. Obtaining electrodes with optimal properties gives a product with a wide application potential, both in analytics and various industries. The aim of this study was to select, from among the presented electrode materials (carbon and oxide), the one whose parameters will be optimal in the context of using them to create sensors. Electrochemical impedance spectroscopy and cyclic voltammetry techniques were used to determine the electrochemical properties of the materials. On the other hand, properties such as hydrophilicity/hydrophobicity and their topological structure were determined using contact angle measurements and confocal microscopy, respectively. Based on the research carried out on a wide group of electrode materials, it was found that transparent conductive oxides of the FTO (fluorine doped tin oxide) type exhibit optimal electrochemical parameters and offer great modification possibilities. These electrodes are characterized by a wide range of work and high chemical stability. In addition, the presence of a transparent oxide layer allows for the preservation of valuable optoelectronic properties. An important feature is also the high sensitivity of these electrodes compared to other tested materials. The combination of these properties made FTO electrodes selected for further research.

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“…Diamond in a form of single crystalline (100% sp 3 ) with a stable bonding configuration of carbon atoms, possesses outstanding properties such as: wide bandgap (5.45 eV), thermal conductivity, chemical stability, and several distinctive physical and chemical properties [1,2]. Therefore, it is one of the most fascinating materials appropriate for wide range of electronic and optoelectronic device applications [3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Impedance spectroscopy analysis of n-type (nitrogen-doped) ultrananocrystalline diamond/p-type Si heterojunction diodes

Zkria¹,

Shaban²,

Abubakr³

et al. 2020

Phys. Scr.

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Heterojunction diodes are constructed by growing n-type (nitrogen-doped) ultrananocrystalline diamond (UNCD)/hydrogenated amorphous carbon (a-C:H) composite films onto p-type Si substrates in nitrogen and hydrogen mixed-gases by coaxial arc plasma deposition. The fabricated heterojunctions are analyzed regarding their film morphology and electrical properties. The complex structure of UNCD/a-C:H films, which consists of nano-sized-sp3 diamond grains and sp2-grain boundaries (GBs), makes it difficult to separate their contribution to electrical conductivity of the films using conventional characterization methods. In this paper we characterize the n-type UNCD/p-type Si heterojunction diode by employing impedance spectroscopy method, which can isolate the differing components that contribute to the overall conductivity of the film. The impedance spectroscopy is measured in the frequency range of 100 Hz to 2 MHz, with AC small signal superimpose on DC bias voltage in the range of 0–1 V. The influence of the bias on UNCD grains and GBs contribution to resistance and capacitance of UNCD/a-C:H film and n-UNCD/p-Si heterojunction is investigated by equivalent circuit model using fitting of the impedance data. The results revealed that the electrical conductivity is mainly controlled by the GBs rather than the UNCD grains. Furthermore, the extracted value of dielectric constant of N-doped UNCD/a-C:H film is found to be comparable with that of microcrystalline diamond, which indicates the capacitance contribution in the device is mainly originated from the UNCD grains. This study demonstrates capability of impedance spectroscopy to provide an obvious separated contribution of sp3 and sp2 bonded carbons to the electrical conductivity in their coexistence materials.

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Diamond Electrochemical Devices

Cited by 6 publications

References 134 publications

A Closed Bipolar Electrochemical Cell for the Interrogation of BDD Single Particles: Electrochemical Advanced Oxidation

A Closed Bipolar Electrochemical Cell for the Interrogation of BDD Single Particles: Electrochemical Advanced Oxidation

Good Choice of Electrode Material as the Key to Creating Electrochemical Sensors—Characteristics of Carbon Materials and Transparent Conductive Oxides (TCO)

Impedance spectroscopy analysis of n-type (nitrogen-doped) ultrananocrystalline diamond/p-type Si heterojunction diodes

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