Diamond deposition on Si (111) and carbon face 6HSiC (0001) substrates by positively biased pretreatment

A review of nucleation, growth and low temperature synthesis of diamond thin films

“…Positive bias enhanced nucleation has helped in achieving the growth of textured diamond films on Si (111) and carbon face 6H-SiC (0001) in an MPCVD. 90 A bias voltage of 100 to 300 V, 3%CH 4 concentration in bias step and 0 . 33%CH 4 concentration in growth step were used to synthesise the films.…”

Effect of Carbonization in Bias-Enhanced Nucleation Step during Highly-Oriented Growth of Diamond Films on 6H-SiC(0001) Substrate

“…Due to superior properties including high thermal conductivity and saturation velocity, diamond grown by chemical vapor deposition (CVD), is considered to be one of large bandgap materials promising for high-temperature and high-power electronic device applications [1]. To implement the electronic use of diamond films, it is necessary to synthesize highly oriented-diamond films on non-diamond substrates.…”

“…The oriented growth of diamonds has mostly been reported on Si (100). However, in this case, the excessive bias voltage increases bombardment of the surface with positive ions [1,2] can damage the substrate surface during the BEN step, causing thus a poorer alignment of the subsequent nucleating diamond crystals [3,4]. In addition, the hetero-epitaxial growth of diamond on silicon substrates has been considered very difficult, due to the relatively large lattice mismatch (52 %) of diamond to silicon and a much higher surface energy of diamond [5].…”

“…To overcome these limitations, a three-step process (carbonization, nucleation, and deposition) has been introduced for the growth of diamond on Si [6]. The carbonization step is used to grow an epitaxial SiC conversion layer between Si and diamond which promotes the formation of stable diamond nuclei [1,6].…”