Diamond based light-emitting diode for visible single-photon emission at room temperature

Abstract

Diamond-based p-i-n light-emitting diodes capable of single-photon emission in the visible spectral region at room temperature are discussed. The diodes were fabricated on a high quality single crystal diamond grown by chemical vapor deposition. Implantation of boron and phosphorus ions followed by annealing at a temperature of 1600 °C has been used for doping p-type and n-type areas, respectively. Electrical characterization of the devices demonstrates clear diode behavior. Spectra of electroluminescence generated in the i-area reveal sole emission from the neutral nitrogen-vacancy (NV) defects. Photon antibunching implies single-photon character of this emission when generated by individual NV defects.

Diamond Nanophotonics

“…As such, we have witnessed the discovery of an additional defect with spin dependent fluorescence [88] , integration of lanthanides into diamond [89] and a revival of the silicon vacancy center. Furthermore, realization of electrically triggered single emitters [155,156] may pave the way to scalability and practical, optoelectronic diamond devices. Recent progress in modulating the emission from the negatively charged state is a pivotal advance toward electrical control on single defects in diamond [157,158] and integration of electrically triggered emitters with photonic resonators.…”

Electrically Driven Quantum Light Sources

“…A distinguishing attribute of NWs grown in the [111] direction with embedded QDs is that the fi ne structure splitting is expected to recede, [ 130 ] thus, it should display excellent photon entanglement via the biexciton-exciton radiative emission cascade. Nanowires are relevant for SPSs as, though of micrometer length, they preserve nanoscale effects such as quantum confi nement due to their diameter dimension, thus being a potential host for quantum systems.…”

“…[ 110 ] The fi rst demonstration of a diamond quantum LED was reported using ion implantation of boron and phosphorus in a high-quality, CVD-grown, singlecrystal diamond. [ 111 ] It was thereby possible to fabricate a p-i-n microdiode hosting an individual NV defect in the intrinsic area, enabling EL SPE at room temperature. The EL-yielding SPS was associated with the neutral charge state of the NV 0 centre due to its characteristic 575 nm zero-phonon line.…”

Systematic study of defect-related quenching of NV luminescence in diamond with time-correlated single-photon counting spectroscopy

“…Such unique properties make these centers appealing not only in fundamental quantum optics [1][2][3] but also in advanced applications, such as quantum computing, [4][5][6] single spin-based magnetic, electrical, and biological sensing, 7-9 quantum cryptography, [10][11][12] and quantum nanomechanics. [13][14][15] A key advantage of single luminescent centers in diamond such as the NV − complex is based on the fact that since they usually consist of deep defects in a wide band-gap material, they can be suitably considered as the solid-state analog of trapped atoms inside a spin-free environment characterized by a broad optical transparency.…”