Diamond as an electronic material

Wort, C. J. H.; Balmer, R.S.

doi:10.1016/s1369-7021(07)70349-8

Cited by 552 publications

(298 citation statements)

References 17 publications

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“…Over 500 different color centers in diamond are known [3] ; their emission wavelengths span a spectral range from the ultraviolet to the near infrared. Furthermore, the diamond host material provides beneficial qualities like chemical inertness, biocompatibility, high transparency from the ultraviolet to infrared spectral range as well as a high mechanical strength (high Young`s modulus) and exceptionally high thermal conductivity [4][5][6] . Furthermore, color centers in diamond have to be considered as potential building blocks of future quantum information processing (QIP) architectures and integrated nanophotonic devices as detailed in the following.…”

Section: Introductionmentioning

confidence: 99%

Diamond Nanophotonics

Aharonovich

Neu

2014

Advanced Optical Materials

296

233

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Section: Introductionmentioning

confidence: 99%

Diamond Nanophotonics

Aharonovich

Neu

2014

Advanced Optical Materials

296

233

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“…Diamond has a wide electronic band-gap of 5.47 eV, combined with an intrinsically high breakdown field of 10 MV/cm, an exceptional thermal conductivity of >20 W/cm K, and a hole saturation velocity of 0.85-1.2 Â 10 7 cm s À1 , which makes it very attractive for high frequency, high power applications based on devices such as field effect transistors (FETs). 1 The robust nature of diamond may enable devices which operate beyond the capabilities of conventional solid-state devices in terms of power handling capacity and operating environment. However, conventional substitutional doping in diamond remains challenging which has limited its potential exploitation for electronic applications.…”

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confidence: 99%

Enhanced surface transfer doping of diamond by V2O5 with improved thermal stability

Crawford

Cao

et al. 2016

Applied Physics Letters

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Surface transfer doping of hydrogen-terminated diamond has been achieved utilising V2O5 as a surface electron accepting material. Contact between the oxide and diamond surface promotes the transfer of electrons from the diamond into the V2O5 as revealed by the synchrotron-based high resolution photoemission spectroscopy. Electrical characterization by Hall measurement performed before and after V2O5 deposition shows an increase in hole carrier concentration in the diamond from 3.0x1012 to 1.8x1013cm2 at room temperature. High temperature Hall measurements performed up to 300 °C in atmosphere reveal greatly enhanced thermal stability of the hole channel produced using V2O5 in comparison with an air-induced surface conduction channel. Transfer doping of hydrogen-terminated diamond using high electron affinity oxides such as V2O5 is a promising approach for achieving thermally stable, high performance diamond based devices in comparison with air-induced surface transfer doping

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“…6 Electronic quality p-type material 7 can be semiconducting, metallic or superconducting, according to the B concentration and temperature. 2 The electronic nature of the surface region is also an important consideration in realizing single-photon, nanoscale quantum devices.…”

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High temperature photoelectron emission and surface photovoltage in semiconducting diamond

Williams

Cooil

Roberts

et al. 2014

Applied Physics Letters

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Sponsorship: EPSRC RONO: EP/G068216/1A non-equilibrium photovoltage is generated in semiconducting diamond at above-ambient temperatures during x-ray and UV illumination that is sensitive to surface conductivity. The H-termination of a moderately doped p-type diamond (111) surface sustains a surface photovoltage up to 700K, while the clean (21) reconstructed surface is not as severely affected. The flat-band C 1s binding energy is determined from 300K measurement to be 283.87 eV. The true value for the H-terminated surface, determined from high temperature measurement, is (285.260.1) eV, corresponding to a valence band maximum lying 1.6 eV below the Fermi level. This is similar to that of the reconstructed (21) surface, although this surface shows a wider spread of binding energy between 285.2 and 285.4 eV. Photovoltage quantification and correction are enabled by real-time photoelectron spectroscopy applied during annealing cycles between 300K and 1200K. A model is presented that accounts for the measured surface photovoltage in terms of a temperature-dependent resistance. A large, high temperature photovoltage that is sensitive to surface conductivity and photon flux suggests a new way to use moderately B-doped diamond in voltage-based sensing devicespublishersversionPeer reviewe

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Diamond as an electronic material

Cited by 552 publications

References 17 publications

Diamond Nanophotonics

Diamond Nanophotonics

Enhanced surface transfer doping of diamond by V2O5 with improved thermal stability

High temperature photoelectron emission and surface photovoltage in semiconducting diamond

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