Diameter-Independent Kinetics in the Vapor-Liquid-Solid Growth of Si Nanowires

Kodambaka, S.; Tersoff, J.; Reuter, M. C.; Ross, Frances M.

doi:10.1103/physrevlett.96.096105

Cited by 268 publications

(277 citation statements)

References 35 publications

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“…A good example of this behaviour is seen in the structures of semiconductor nanowires, often grown by the vapor-liquid-solid (VLS) method. 12,13) InP is cubic (zinc blende) in the bulk but found to take the hexagonal Wurtzite structure in nanowires. 14,15) Other III-V semiconductors, such as GaP and GaAs, are apparently not as close to being unstable as nanowires in the cubic phase; nevertheless, they show a strong trend towards hexagonal stacking along their cubic 111 crystal directions by the introduction of frequent stacking faults.…”

Section: Phase Diagramsmentioning

confidence: 99%

Nanoparticle Structure by Coherent X-ray Diffraction

Robinson

2013

J. Phys. Soc. Jpn.

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This review examines the physical reasons why nanoparticles differ in structure from the bulk. Certain simple properties of nanoparticles are explained through these structural differences. A powerful method of measuring the three dimensional structure of nanoparticles, Coherent X-ray diffraction (CXD), is introduced. A key experiment is described that uses CXD to study the redistribution of strains on the surface of a Au nanocrystal. Some future perspectives are discussed in conclusion.

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Section: Phase Diagramsmentioning

confidence: 99%

Nanoparticle Structure by Coherent X-ray Diffraction

Robinson

2013

J. Phys. Soc. Jpn.

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“…A broad range of semiconductor nanowires, including Si, Ge [13,14], III-Vs [15,16] and II-VIs [17][18][19][20][21], have been grown using chemical vapor deposition (CVD), thermal evaporation, solvothermal synthesis and molecular-beam exitaxy (MBE) based on the metal-catalyzed vaporliquid-solid (VLS) mechanism [22]. However, only a few reports on the synthesis of tellurium-based NWs have been published so far.…”

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confidence: 99%

MBE Growth and Properties of ZnTe- and CdTe-Based Nanowires

Wójtowicz¹,

Janik²,

Zaleszczyk³

et al. 2008

J. Korean Phy. Soc.

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We review our results on the growth of ZnTe-and CdTe-based nanowires (NWs) and on their basic structural and optical properties. The nanowires were produced by using molecular beam epitaxy (MBE) with the use of a mechanism of catalytically-enhanced growth. The growth of ZnTe, CdTe, ZnMgTe and ZnMnTe nanowires was performed from elemental Zn, Cd, Mn, Mg and Te sources on the surfaces of (001)-, (110)-and (111)B-oriented GaAs substrates with Au nanocatalysts. The morphological and structural properties of the nanowires were assessed by using X-ray diffractometry, field-emission scanning electron microscopy, and high resolution transmission electron microscopy. Additional studies of the compositions of both the nanowires and the Au-rich nanocatalysts were performed with the use of energy dispersive X-ray spectroscopy. The optical properties of the NWs were assessed by using photoluminescence and Raman-scattering studies performed in both macro and micro modes. The studies revealed that binary and quaternary nanowires with average diameters from 30 to 70 nm and lengths from 1 to 2.6 µm were monocrystalline in their upper parts, their growth axis was 111 , and they grow along the [111] direction of the substrate, independent of the substrate orientation used. A Au-rich (with 20 % Ga) spherical nanocatalyst was always visible at the tip of a nanowire, thus indicating that a vapor-liquid-solid mechanism was responsible for the growth of the ZnTe-and the CdTe-based nanowires. The formation of homogeneous mixed crystal ZnMnTe and ZnMgTe nanowires was demonstrated by measurements of the variation of the lattice constant and by Raman experiments that revealed the expected shift and appearance of new phonon lines and a strong enhancement of the LO-phonon structures for an excitation close to the exciton energy of the NW materials. The photoluminescence from the internal Mn 2+ transition between crystal-field-split energy levels ( 4 T1 → 6 A1) was observed in the ZnMnTe nanowires.

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“…However, in recent years, both experimentalists and theorists [4][5][6][7] have demonstrated that thin semiconductor nanowires with diameter smaller than 50 nm can grow and show interesting growth behaviors. For example, in the growth of thin Si and ZnSe nanowires catalyzed by Au particles, smaller nanowires have higher growth rates compared to thicker ones, [5][6][7] and most of ultrathin nanowires grow at relatively low temperatures. Recently, Kodambaka et al 8 demonstrated by in-situ transmission electron microscopy (TEM) that solid catalysts led to Ge nanowire growth even at a temperature below the eutectic point.…”

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Growth behaviors of ultrathin ZnSe nanowires by Au-catalyzed molecular-beam epitaxy

Wong

Chan

Sou

et al. 2008

Applied Physics Letters

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Ultrathin ZnSe nanowires grown by Au-catalyzed molecular-beam epitaxy show an interesting growth behavior of diameter-dependence of growth rates. The smaller the nanowire diameter, the faster is its growth rate. This growth behavior is totally different from that of the nanowires with diameters greater than 60 nm and can not be interpreted by the classical theories of the vapor-liquid-solid mechanism. For the Au-catalyzed nanowire growth at low temperatures, we found that the surface and interface incorporation and diffusion of the source atoms at the nanowire tips controlled the growth of ultrathin ZnSe nanowires.The unique configuration of the metal catalytic growth of nanowires (also known as the vapor-liquid-solid (VLS) growth) makes it very promising for applications in nanotechnology. The most significant work on the mechanism of the unidirectional growth of semiconductor whiskers through the VLS mechanism was published by Wagner and Ellis. 1 Classically, the unidirectional growth of Si whiskers, for example, can be simply interpreted based on the difference of the sticking coefficients of the impinging vapor source atoms on the liquid (the catalytic droplet) and on the solid surfaces (the whisker and substrate). An ideal liquid surface captures all impinging Si source atoms, while a solid surface of Si rejects almost all source atoms if the temperature is sufficiently high. Due to the presence of metal catalysts, the geometry and atomic structure of the interface between the metal catalyst and the whisker have been found to be very critical to the whisker growth, particularly the growth velocity, growth direction or crystal orientation. In the classical VLS model, it is believed that the metal catalyst is in molten state which absorbs the source materials to form a supersaturated liquid droplet.The precipitation of the source atoms occurs at the dropletwhisker interface, and the precipitation rate is mainly determined by the supersaturation of the droplet. Givargizov et al., 2,3 determined the whisker growth rate as a function of the driving force of supersaturation (Δμ/kT) and first empirically described the growth rate by

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Diameter-Independent Kinetics in the Vapor-Liquid-Solid Growth of Si Nanowires

Cited by 268 publications

References 35 publications

Nanoparticle Structure by Coherent X-ray Diffraction

Nanoparticle Structure by Coherent X-ray Diffraction

MBE Growth and Properties of ZnTe- and CdTe-Based Nanowires

Growth behaviors of ultrathin ZnSe nanowires by Au-catalyzed molecular-beam epitaxy

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