Diameter-Controlled and Surface-Modified Sb2Se3 Nanowires and Their Photodetector Performance

Abstract

Due to its direct and narrow band gap, high chemical stability, and high Seebeck coefficient (1800 μVK−1), antimony selenide (Sb2Se3) has many potential applications, such as in photovoltaic devices, thermoelectric devices, and solar cells. However, research on the Sb2Se3 materials has been limited by its low electrical conductivity in bulk state. To overcome this challenge, we suggest two kinds of nano-structured materials, namely, the diameter-controlled Sb2Se3 nanowires and Ag2Se-decorated Sb2Se3 nanowires. The photocurrent response of diameter-controlled Sb2Se3, which depends on electrical conductivity of the material, increases non-linearly with the diameter of the nanowire. The photosensitivity factor (K = Ilight/Idark) of the intrinsic Sb2Se3 nanowire with diameter of 80–100 nm is highly improved (K = 75). Additionally, the measurement was conducted using a single nanowire under low source-drain voltage. The dark- and photocurrent of the Ag2Se-decorated Sb2Se3 nanowire further increased, as compared to that of the intrinsic Sb2Se3 nanowire, to approximately 50 and 7 times, respectively.

Vibrational properties and bonding nature of Sb2Se3and their implications for chalcogenide materials

“…1 ). This bonding anisotropy is directly relevant for recent reports on nanoribbons and nanowires of Sb 2 Se 3 : 16 the latter are cleaved from the bulk phase, in a way controlled by physical and chemical interactions, and such nanostructures are of great interest for applications—owing, for example, to improved photosensitivity. 16 e…”

An Antimony Selenide Molecular Ink for Flexible Broadband Photodetectors

“…Among various inorganic semiconductors, metal chalcogenides, particularly, group V–VI compounds have been widely studied for their opto-electrical [24,25] and thermoelectric properties [26,27] and successfully utilized in thin film transistors, [5,6] solar cells, [7,24,28] thermoelectric devices, [29,30] photodetectors (PDs), [31–33] and phase change memory [34] applications. These films have typically been prepared via sophisticated deposition techniques such as catalyst-assisted chemical vapor deposition, [35] sputtering, [36] thermal evaporation [24,37] and molecular beam epitaxy [38] that require energy-intensive, high vacuum deposition conditions not amenable to high-throughput mass production.…”

Thermal and Thermoelectric Transport in Highly Resistive Single Sb2Se3 Nanowires and Nanowire Bundles

“…Over the past two decades, many methods have been developed to prepare Sb 2 Se 3 nanostructures (nanotubes, NWs, and nanobelts). Several studies have analyzed the electrical properties and photoresponse of Sb 2 Se 3 nanomaterials27282930313233, but, detailed studies on the thermoelectric properties and thermal conductivity of Sb 2 Se 3 nanostructures remain lacking.…”