Diamagnetic shift of exciton energy levels in GaAs-Ga1−xAlxAs quantum wells

Bugajski, M.; Kuszko, W.; Regiński, K.

doi:10.1016/0038-1098(86)90265-6

Cited by 28 publications

(15 citation statements)

References 9 publications

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“…1(a), we show the PL energy as a function of B at the center of the excitation spot, where the density is highest. One can clearly observe a quadratic behavior, which characterizes a bound exciton [15]. This quadratic behavior is observed at any measured location along the PL profile, supporting the conclusion that the diffusing carriers at this excitation power are bound indirect excitons.…”

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confidence: 72%

Photoluminescence Ring Formation in Coupled Quantum Wells: Excitonic Versus Ambipolar Diffusion

et al. 2008

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In this Letter, we study the diffusion properties of photoexcited carriers in coupled quantum wells around the Mott transition. We find that the diffusion of unbound electrons and holes is ambipolar and is characterized by a large diffusion coefficient, similar to that found in p-i-n junctions. Correlation effects in the excitonic phase are found to significantly suppress the carriers' diffusion. We show that this difference in diffusion properties gives rise to the appearance of a photoluminescence ring pattern around the excitation spot at the Mott transition.

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confidence: 72%

Photoluminescence Ring Formation in Coupled Quantum Wells: Excitonic Versus Ambipolar Diffusion

et al. 2008

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“…It is well known that the exciton ground state energy should increase quadratically with magnetic field, a phenomenon known as the exciton diamagnetic shift [20]. The shift is given by EB B 2 hr 2 i , where hr 2 i is the expectation value of the exciton radius squared, e 2 8c 2 , and is the reduced mass of the exciton in the plane parallel to the QWs.…”

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confidence: 99%

Mott Transition of Excitons in Coupled Quantum Wells

et al. 2008

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In this work we study the phase diagram of indirect excitons in coupled quantum wells and show that the system undergoes a phase transition to an unbound electron-hole plasma. This transition is manifested as an abrupt change in the photoluminescence linewidth and peak energy at some critical power density and temperature. By measuring the exciton diamagnetism, we show that the transition is associated with an abrupt increase in the exciton radius. We find that the transition is stimulated by the presence of direct excitons in one of the wells and show that they serve as a catalyst of the transition.

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“…To generate this magnetic field, we can use a magnet of polyhelix resistive [14]. Applying this type of field is caused a diamagnetic shift in energy levels of excitons [15]. In the other words, energy levels of excitons enhance by applying a magnetic field.…”

Section: The Role Of Magnetic Field On Qws Structuresmentioning

confidence: 99%

“…Thus, we can expect changing in central frequency of strained QWs slow light device by applying magnetic field to the structure. The 1 s state exciton diamagnetic shift as a result of applying a magnetic field is expressed as [15]:…”

Section: The Role Of Magnetic Field On Qws Structuresmentioning

confidence: 99%

Analytical Investigation of Slow Light Systems with Strained Quantum Wells Structure under Applied Magnetic and Electric Fields Based on V-type EIT

Abdolhosseini

Kaatuzian

Kohandani

2017

optics

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In this paper, a slow light device, which is composed of GaAs/AlGaAs [110] strained quantum wells, has been studied to realize V-type electromagnetically induced transparency phenomenon. Influences of applying electric and magnetic fields are investigated theoretically on main properties of the slow light devices, such as slow down factor and refractive index, based on Bloch equations approach. This is the first study of applying external magnetic and electric fields impacts on proposed structure by using V-type electromagnetically induced transparency. By changing the external fields, we are able to modify central frequency of presented structure that provides appropriate conditions in order to be utilized in optical storages, optical buffers and all-optical switches. According to the simulation results, the peak value of slow down factor is estimated to near 5000 when power intensity of pump and signal are 10 kW/cm 2 and 0.1 kW/cm 2 , respectively. With optimization the amount of external fields, the central frequency of system can reach positive shift as high as 1.1 THz and negative shift close to -1.1 THz.

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Diamagnetic shift of exciton energy levels in GaAs-Ga1−xAlxAs quantum wells

Cited by 28 publications

References 9 publications

Photoluminescence Ring Formation in Coupled Quantum Wells: Excitonic Versus Ambipolar Diffusion

Photoluminescence Ring Formation in Coupled Quantum Wells: Excitonic Versus Ambipolar Diffusion

Mott Transition of Excitons in Coupled Quantum Wells

Analytical Investigation of Slow Light Systems with Strained Quantum Wells Structure under Applied Magnetic and Electric Fields Based on V-type EIT

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