Diagnostics of Technological Characteristics of High–power Transistors Using Relaxing Impedance Spectrometry of Thermal Processes

Васьков, О. С.; Нисс, В. С.; Кононенко, В. К.; Turtsevich, A. S.; Rubtsevich, I.I.; Соловьев, Я А; Kerentsev, A. F.

doi:10.17073/1609-3577-2014-1-47-52

Izv. vysš. učebn. zaved., Mater. èlektron. teh.

2015

DOI: 10.17073/1609-3577-2014-1-47-52

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Diagnostics of Technological Characteristics of High–power Transistors Using Relaxing Impedance Spectrometry of Thermal Processes

О. С. Васьков¹,

В. С. Нисс²,

В. К. Кононенко³

et al.

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Diagnostics of Technological Characteristics of High–power Transistors Using Relaxing Impedance Spectrometry of Thermal Processes

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