Diagnostics of Radiation Defects in Silicon Carbide

Girka, Oleksii; Mokrushin, A. D.; Мохов, Е. Н.; Svirida, S.V.; Шишкин, А. В.

doi:10.4028/www.scientific.net/msf.105-110.1021

Cited by 5 publications

(6 citation statements)

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“…In stage III, mobile silicon vacancies were presumably trapped by nitrogen atoms to form V Si N C complexes. Girka et al reported that complexes of silicon vacancies and nitrogen atoms were annealed out around 1400°C [20], although, some papers reported that V Si N C is stable at temperature higher than 1400°C [21]. The long lifetime s 2 also decreased above 1400°C.…”

Section: Resultsmentioning

confidence: 97%

Positron annihilation of vacancy-type defects in neutron-irradiated 4H–SiC

Yoshiie

Okada

2009

Journal of Nuclear Materials

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Section: Resultsmentioning

confidence: 97%

Positron annihilation of vacancy-type defects in neutron-irradiated 4H–SiC

Yoshiie

Okada

2009

Journal of Nuclear Materials

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“…It is consistent with the conclusion for the as-grown n-type specimen. Girka et al 19 also reported that complexes of silicon vacancies and nitrogen atoms were annealed at around 1400°C. Probably, the complexes dissociate to silicon vacancies and nitrogen atoms.…”

Section: Resultsmentioning

confidence: 99%

“…17 Puff et al 18 reported that a lifetime component related to vacancy-type defects was found in 6H-and 4H-SiC grown by chemical vapor deposition. Girka et al 19 and Rempel et al 20,21 investigated the annealing behavior of average positron lifetime for electron-irradiated 6H-SiC. Their work revealed three annealing stages at 150-500, 1400-1500, and 1700-2900°C and one ''negative'' annealing stage at 1000-1100°C.…”

Section: Introductionmentioning

confidence: 99%

Annealing processes of vacancy-type defects in electron-irradiated and as-grown 6H-SiC studied by positron lifetime spectroscopy

Kawasuso¹,

Itoh²,

Okada³

et al. 1996

Journal of Applied Physics

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Annealing processes of vacancy-type defects in 3 MeV electron-irradiated and as-grown 6H-SiC have been studied by positron lifetime spectroscopy. Vacancy-type defects giving rise to a positron lifetime of 183 ps were detected in as-grown n-type specimens. They were found to be annealed at around 1400°C and were related to silicon vacancies, possibly complexes of silicon vacancies and nitrogen atoms. Defects related to carbon vacancies, silicon vacancies, and divacancies were found to be created by electron irradiation. The defects related to carbon vacancies and divacancies were found to be annealed up to 500°C. The defects related to silicon vacancies were found to be annealed at around 750 and 1400°C. The former annealing stage was inferred to be due to migration of silicon vacancies to internal sinks or nitrogen atoms to form complexes of silicon vacancies and nitrogen atoms. The latter annealing stage was explained as due to annihilations of the complexes as well as the case of as-grown specimens.

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“…13 and 14͒ compared to a-Si:H. 15,16 A number of groups have applied positron annihilation techniques to the study of irradiation induced defects in bulk and epitaxially grown, crystalline SiC. [17][18][19][20][21][22][23] Very recently, our own group demonstrated that positrons are also a very sensitive probe of the influence of various processing conditions on defects in CVD a-SiC thin films. 24 In the present work, defect analysis using a variable energy positron beam was combined with optical and nuclear characterization techniques to reveal changes in the defect structure arising from annealing and the associated evolution of hydrogen from the films.…”

Section: Introductionmentioning

confidence: 99%

Effect of annealing on the defect structure in a-SiC:H films

Friessnegg

Boudreau

Brown

et al. 1996

Journal of Applied Physics

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The annealing behavior of amorphous, hydrogenated silicon carbide films in the range 400-900°C was studied by optical characterization methods, 15 N hydrogen profiling, and defect profiling using a variable energy positron beam. The films were deposited in an electron cyclotron resonance chemical vapor deposition system using ditertiary butyl silane ͓SiH 2 ͑C 4 H 9 ͒ 2 ͔ as the monosource for silicon and carbon. As-deposited films were found to contain large concentrations of hydrogen, both bonded and unbonded. Under rapid thermal annealing in a N 2 atmosphere, the bonded hydrogen effuses giving rise to additional Si-C bond formation and to film densification. After annealing at high temperatures in N 2 , a marked decrease in the total hydrogen content is observed. After annealing in vacuum, however, the hydrogen effusion promotes void formation in the films.

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Diagnostics of Radiation Defects in Silicon Carbide

Cited by 5 publications

References 0 publications

Positron annihilation of vacancy-type defects in neutron-irradiated 4H–SiC

Positron annihilation of vacancy-type defects in neutron-irradiated 4H–SiC

Annealing processes of vacancy-type defects in electron-irradiated and as-grown 6H-SiC studied by positron lifetime spectroscopy

Effect of annealing on the defect structure in a-SiC:H films

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