2024
DOI: 10.1016/j.jre.2023.02.002
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DFT investigation of half-metallic ferromagnetic rare earth based spinels MgHo2Z4 (Z = S, Se)

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Cited by 9 publications
(1 citation statement)
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“…Furthermore, one needs sufficient control over factors that cause electron spins to speed up data storage in nanoscale devices. Due to its reduced size and fast processing, non-volatile memory (NVM) is a situation where this is crucial [4,5]. Despite all the benefits of spintronic devices and their uses, there are still two significant obstacles: high-temperature phase instability and magnetic ion clustering.…”
Section: Introductionmentioning
confidence: 99%
“…Furthermore, one needs sufficient control over factors that cause electron spins to speed up data storage in nanoscale devices. Due to its reduced size and fast processing, non-volatile memory (NVM) is a situation where this is crucial [4,5]. Despite all the benefits of spintronic devices and their uses, there are still two significant obstacles: high-temperature phase instability and magnetic ion clustering.…”
Section: Introductionmentioning
confidence: 99%