Handbook of Organic Materials for Electronic and Photonic Devices 2019
DOI: 10.1016/b978-0-08-102284-9.00019-x
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Device stability in organic optoelectronics

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Cited by 4 publications
(2 citation statements)
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“…Figure SI-8 in the Supporting Information shows the stability of the rGO-nanoparticle stack on P3HT/PCBM, with the topography and optical characteristics unchanged over 4 months. Moisture is one of the key degradation factors for P3HT; , the rGO-like layer being able to block the direct contact of P3HT/PCBM with water during the Cu etching process is also an important criterion for its use in viable devices.…”
Section: Resultsmentioning
confidence: 99%
“…Figure SI-8 in the Supporting Information shows the stability of the rGO-nanoparticle stack on P3HT/PCBM, with the topography and optical characteristics unchanged over 4 months. Moisture is one of the key degradation factors for P3HT; , the rGO-like layer being able to block the direct contact of P3HT/PCBM with water during the Cu etching process is also an important criterion for its use in viable devices.…”
Section: Resultsmentioning
confidence: 99%
“…Despite improvements in device PCE, long-term stability remains a central challenge to OPV commercialization. , One factor impacting long-term stability is detrimental changes in the blend morphology over time. Initially, the physically blended donor and acceptor form a kinetically trapped morphology with nanoscale domains of each pure component and, depending on the donor/acceptor pair, an additional amorphous mixed phase .…”
Section: Introductionmentioning
confidence: 99%