Device simulation of a highly efficient CZTS solar cell with CuS as hole transport layer

Hosen, Adnan; Islam, Benjer; Khatun, Habiba; Islam, Muhammad Shafiqul; Rahmotullah, K. M. Sayem Bin; Ahmed, Sheikh Rashel Al

doi:10.1109/ictp53732.2021.9744237

Cited by 4 publications

(4 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In recent years, various organisations have researched the Cu 2 ZnSnS 4 (CZTS) absorber material with quaternary kesterite structure in an effort to determine whether it would be the most promising replacement for CIGS [7][8][9]. This is because CZTS technology uses raw materials at a significantly lower cost than CIGS technology, which is more financially viable [10].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Modeling and Simulation of CZTS Solar Cell using Zn_1-xMg_xO as a buffer layer and Cul as a hole transport layer for efficiency improvement

Yadav,

Patel,

Mishra

2024

Eng. Res. Express

View full text Add to dashboard Cite

This paper explores the impact of CZTS based solar cells using zinc magnesium oxide (Zn1-XMgXO) as a buffer layer and CuI (Copper iodide) as the hole transport layer using through SCAPS-1D(Solar Cell Capacitance Simulator) simulator. In the proposed work, the cell characteristics of the CZTS absorber layer, including electron affinity, defect density, and acceptor concentration, have been tuned. In addition, the study examines the effects of CBO which enhances the transfer of charge carriers by optimizing band alignment, Series resistance(Rs), Shunt resistance(Rsh), and Work Function (WF) of the metal contacts on the solar cell's performance. From structures, CZTS/Zn1-XMgXO with x =0.0652 demonstrated the highest PCE of 32.63% improvement in open circuit Voltage (Voc) =1.0885 Volts, Short circuit density (Jsc) = 33.89, and fill factor (FF) = 88.43%.

show abstract

Section: Introductionmentioning

confidence: 99%

“…Hole transport layer helps to reduce the recombination at back side and improve the hole transportation towards the back contact [10]. CuI is a semiconductor with a broad bandgap (3.1 eV) and three crystalline phases: a, b, and g. The p-type semiconductor CuI is found in the g-phase of these crystalline phases.…”

Section: Introductionmentioning

confidence: 99%

Modeling and Simulation of CZTS Solar Cell using Zn_1-xMg_xO as a buffer layer and Cul as a hole transport layer for efficiency improvement

Yadav,

Patel,

Mishra

2024

Eng. Res. Express

View full text Add to dashboard Cite

show abstract

“…Nevertheless, a considerable back surface recombination loss is another challenge in order to achieve the best PV efficiency. It has been inspected that incorporating an hole transport layer (HTL) amid the CZTS layer and the back metal contact can minimize surface recombination loss at the interface, thus enhance the conversion efficiency remarkably 53–56 . In this regard, we suggest to use the p + Sb 2 S 3 semiconducting material as an HTL with the CZTS absorber to minimize the carrier recombination loss at the interface.…”

Section: Introductionmentioning

confidence: 99%

“…It has been inspected that incorporating an hole transport layer (HTL) amid the CZTS layer and the back metal contact can minimize surface recombination loss at the interface, thus enhance the conversion efficiency remarkably. [53][54][55][56] In this regard, we suggest to use the p + Sb 2 S 3 semiconducting material as an HTL with the CZTS absorber to minimize the carrier recombination loss at the interface. The Sb 2 S 3 material has important optoelectronic characteristics like suitable band gap (∼1.7 eV), superior absorption coefficient (∼10 5 cm −1 ), earth-abundant in constituents, less toxicity, and low-cost fabrication process.…”

Section: Introductionmentioning

confidence: 99%

Performance evaluation of WS₂ as buffer and Sb₂S₃ as hole transport layer in CZTS solar cell by numerical simulation

Riyad

Sunny

Khatun

et al. 2022

Engineering Reports

View full text Add to dashboard Cite

This study reports on performance enhancement of a Cu2ZnSnS4 solar cell introducing Sb2S3 as hole transport layer (HTL) along WS2 as buffer layer. We have investigated photovoltaic (PV) characteristics by utilizing SCAPS‐1D. A comparative analysis on PV performances between conventional CZTS/CdS and proposed Ni/Sb2S3/CZTS/WS2/FTO/Al solar cells is presented. It is revealed that “spike like” band structure at the CZTS/WS2 interface having smaller conduction band offset makes it potential alternative to commonly used CdS buffer. This report also evaluates that the Sb2S3 as an HTL inserted at the rear of CZTS enhances performances by reducing carrier recombination at back interface with appropriate band alignment. The impacts of thickness, carrier concentration of different layers, and bulk defect density in CZTS as well as the interface defects on cell outputs are analyzed. The influences of temperature, work function, and cell resistances are also examined. Optimum absorber thickness of 1.0 μm along doping density of 1017 cm−3 is selected. A maximum efficiency of 30.63% is achieved for the optimized CZTS cell. Therefore, these results suggest that Sb2S3 as HTL and WS2 as buffer layer can be employed effectively to develop highly efficient and low‐cost CZTS solar cells.

show abstract

Performance Enhancement of Heterostructure CdTe Solar Cells with TiO₂ and CuS Layers:A Multifaceted Exploration of Comparative Numerical Analysis

Jena,

Singh

2023

2023 IEEE 3rd International Conference on Applied Electromagnetics, Signal Processing, &Amp; Communication (AESPC)

View full text Add to dashboard Cite

Device simulation of a highly efficient CZTS solar cell with CuS as hole transport layer

Cited by 4 publications

References 19 publications

Modeling and Simulation of CZTS Solar Cell using Zn_1-xMg_xO as a buffer layer and Cul as a hole transport layer for efficiency improvement

Modeling and Simulation of CZTS Solar Cell using Zn_1-xMg_xO as a buffer layer and Cul as a hole transport layer for efficiency improvement

Performance evaluation of WS₂ as buffer and Sb₂S₃ as hole transport layer in CZTS solar cell by numerical simulation

Performance Enhancement of Heterostructure CdTe Solar Cells with TiO₂ and CuS Layers:A Multifaceted Exploration of Comparative Numerical Analysis

Contact Info

Product

Resources

About

Device simulation of a highly efficient CZTS solar cell with CuS as hole transport layer

Cited by 4 publications

References 19 publications

Modeling and Simulation of CZTS Solar Cell using Zn1-xMgxO as a buffer layer and Cul as a hole transport layer for efficiency improvement

Modeling and Simulation of CZTS Solar Cell using Zn1-xMgxO as a buffer layer and Cul as a hole transport layer for efficiency improvement

Performance evaluation of WS2 as buffer and Sb2S3 as hole transport layer in CZTS solar cell by numerical simulation

Performance Enhancement of Heterostructure CdTe Solar Cells with TiO2 and CuS Layers:A Multifaceted Exploration of Comparative Numerical Analysis

Contact Info

Product

Resources

About

Modeling and Simulation of CZTS Solar Cell using Zn_1-xMg_xO as a buffer layer and Cul as a hole transport layer for efficiency improvement

Modeling and Simulation of CZTS Solar Cell using Zn_1-xMg_xO as a buffer layer and Cul as a hole transport layer for efficiency improvement

Performance evaluation of WS₂ as buffer and Sb₂S₃ as hole transport layer in CZTS solar cell by numerical simulation

Performance Enhancement of Heterostructure CdTe Solar Cells with TiO₂ and CuS Layers:A Multifaceted Exploration of Comparative Numerical Analysis