Device-quality polycrystalline and amorphous silicon films by hot-wire chemical vapour deposition

Schropp, R.E.I.; Feenstra, K. F.; Molenbroek, E. C.; Meiling, H.; Rath, J.K.

doi:10.1080/01418639708241096

Cited by 132 publications

(38 citation statements)

References 21 publications

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“…Then, the deposition of an a-Si:H n-i-p layer stack was carried out in a multichamber deposition system which is described elsewhere. 30 To provide conformal coverage, the intrinsic ͑i-͒ layer was deposited by hot-wire chemical vapor deposition ͑CVD͒ ͑Ref. 31͒ using SiH 4 :H 2 ͑30:60͒ as source gasses, whereas plasma-enhanced CVD was employed for the deposition of the p-and n-layers.…”

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confidence: 99%

Nanorod solar cell with an ultrathin a-Si:H absorber layer

Kuang

Werf

Houweling

et al. 2011

Applied Physics Letters

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We propose a nanostructured three-dimensional ͑nano-3D͒ solar cell design employing an ultrathin hydrogenated amorphous silicon ͑a-Si:H͒ n-i-p junction deposited on zinc oxide ͑ZnO͒ nanorod arrays. The ZnO nanorods were prepared by aqueous chemical growth at 80°C. The photovoltaic performance of the nanorod/a-Si:H solar cell with an ultrathin absorber layer of only 25 nm is experimentally demonstrated. An efficiency of 3.6% and a short-circuit current density of 8.3 mA/ cm 2 were obtained, significantly higher than values achieved for planar or even textured counterparts with three times thicker ͑ϳ75 nm͒ a-Si:H absorber layers.

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confidence: 99%

Nanorod solar cell with an ultrathin a-Si:H absorber layer

Kuang

Werf

Houweling

et al. 2011

Applied Physics Letters

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“…A description of the deposition system can be found elsewhere [11]. The source gases, SiH 4 and NH 3 , were catalytically decomposed at four resistively heated tantalum filaments held at 2100°C, leading to a high deposition rate of about 3 nm/s.…”

Section: Methodsmentioning

confidence: 99%

Bonding rearrangement in amorphous silicon nitrides deposited by hot-wire chemical vapor deposition upon thermal annealing

Mai

Verlaan

Werf

et al. 2008

Journal of Non-Crystalline Solids

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The bonding rearrangement upon thermal annealing of amorphous silicon nitride (a-SiN x :H) films deposited by hot-wire chemical vapor deposition was studied. A wide range of N/Si atom ratio between 0.5 and 1.6 was obtained for the a-SiN x :H sample series by varying the source gases ratio only. Evolutions of Si-N, Si-H and N-H bonds upon annealing were found to depend strongly on the N/Si atom ratio of the films. According to the above observations, we propose possible reaction pathways for bonding rearrangement in a-SiN x :H with different N/Si ratios.

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“…The structure of the triple junction solar cell is substrate (stainless-steel or Corning glass)/rough Ag/ ZnO/nc-Si:H n-i-p bottom cell/proto-SiGe:H n-i-p middle cell/proto-Si:H n-i-p top cell/ITO/Au grid. The silicon layers were deposited in a multi-chamber ultra-high vacuum system called PASTA [11]. Doped layers (boron and phosphorus doped nc-Si:H) and intrinsic proto-SiGe:H [12] were prepared using 13.56 MHz PECVD [13], whereas HWCVD was applied to fabricate intrinsic proto-Si:H [4] and ncSi:H [5,9,10,14].…”

Section: Methodsmentioning

confidence: 99%

On the development of single and multijunction solar cells with hot-wire CVD deposited active layers

Franken

Stolk

et al. 2008

Journal of Non-Crystalline Solids

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We present an overview of the scientific challenges and achievements during the development of thin film silicon based single and multijunction solar cells with hot-wire chemical vapor deposition (HWCVD) of the active silicon layers. The highlights discussed include the development of Ag/ZnO coatings with a proper roughness and morphology for optimal light trapping in single and multijunction thin film silicon solar cells, studies of the structural defects created by a rough substrate surface and their influence on the performance of nc-Si:H n-i-p single junction solar cells, and studies of the phase change during the growth of nc-Si:H by HWCVD and the use of a 'reverse' H 2 profiling technique to achieve nc-Si:H single junction n-i-p cells with high performance. Thus far, the best AM1.5 efficiency reached for n-i-p cells on stainless-steel with HWCVD i-layers is 8.6% for single junction nc-Si:H solar cells and 10.9% for triple junction solar cells. The opportunities for further improvement of cell efficiency are also discussed. We conclude that the uniqueness of HWCVD and of the i-layers deposited with this technique require some adjustments in the strategy for optimization of single or multijunction solar cells, such as using a reverse H 2 profiling technique for the deposition of nc-Si:H i-layers. However, the output performance of solar cells with HWCVD deposited i-layers is close to those with i-layers deposited by other techniques. The difference between the best nc-Si:H ni-p cells obtained so far in our lab and the reported best n-i-p cells with PECVD i-layers can be mainly attributed to the differences in the rough substrates and to the use of rather thin i-layers.

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Device-quality polycrystalline and amorphous silicon films by hot-wire chemical vapour deposition

Cited by 132 publications

References 21 publications

Nanorod solar cell with an ultrathin a-Si:H absorber layer

Nanorod solar cell with an ultrathin a-Si:H absorber layer

Bonding rearrangement in amorphous silicon nitrides deposited by hot-wire chemical vapor deposition upon thermal annealing

On the development of single and multijunction solar cells with hot-wire CVD deposited active layers

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