Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy

Abstract

N-type Ga2O3 homoepitaxial thick films were grown on β-Ga2O3(010) substrates by ozone molecular beam epitaxy. The epitaxial growth rate was increased by more than ten times by changing from the (100) plane to the (010) plane. The carrier concentration of the epitaxial layers could be varied within the range of 1016–1019 cm-3 by changing the Sn doping concentration. Platinum Schottky barrier diodes (SBDs) on 1.4-µm-thick β-Ga2O3 homoepitaxial layers were demonstrated for the first time. The SBDs exhibited a reverse breakdown voltage of 100 V, an on-resistance of 2 mΩ cm2, and a forward voltage of 1.7 V (at 200 A/cm2).

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

“…First, it has a bandgap wider than 4.5 eV, leading to a high breakdown electric field of ≈9 MV cm −1 . [62,[116][117][118][119] Second, it displays good controllability of n-type conduction over a wide range of n ≈ 10 15 -10 19 cm −3 through Si or Sn doping, [86,120,121] and an even more widely tunable resistivity spanning the range ≈ 10 −3 -10 12 Ω·cm. Third, as seen in Figure 1, its estimated Baliga figure of merit (BFOM) is higher than those of WBG SiC and GaN (despite its relatively lower mobility), though not as high as those of UWBG AlN, diamond, and c-BN.…”

“…2006 [79] /1975 [80] TBD /1981 [82] ≈ 0.94/TBD 2008 [81] /-(7) Relative permittivity 10.4 for E//c axis; 9.5 for E ┴ c axis [83,84] Interpolation 9.76, E//c axis [85] (corrected for fringing fields); NR ┴ c axis -10 [86] 7.1 [87] 5.7 [58] Depends on insulator…”

Anisotropic thermal conductivity in single crystal β-gallium oxide

“…Because of the large bandgap and the resultant large electrical breakdown strength, this material can sustain large voltages, making it attractive for high voltage device applications. Recently, β-Ga 2 O 3 Schottky diodes with large reverse breakdown voltages and β-Ga 2 O 3 field-effect transistors sustaining large drain voltages have been demonstrated [1][2][3][4] . In a high-voltage device, most of the power is dissipated in the channel, causing an increase in the channel temperature.…”

Origin of Point Defects in β-Ga2O3 Single Crystals Doped with Mg2+ Ions

“…Recently, metal semiconductor eld-e ect transistor (MESFETs) [1,2], metal oxide semiconductor elde ect transistor (MOSFETs) [1,3] and the Schottky barrier diode (SBDs) [4,5] based on β-Ga 2 O 3 were produced.…”