Device Physics of Narrow Gap Semiconductors

Chu, Junhao; Sher, A.

doi:10.1007/978-1-4419-1040-0

Cited by 64 publications

(68 citation statements)

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“…3 are shown transmission spectra of Hg 1-x Cd x Te epitaxial layers at T = 300 K at different parts of the chip (middle and opposite corners of epitaxial structure on CdZnTe substrate). Such kind of spectra usually are used for determination of detector photo-response long-wavelength boundary λ co manufactured from these layers at 50 % of transparency T max [10].…”

Section: Experiments and Estimationsmentioning

confidence: 99%

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HgCdTe PHOTODIODES FOR INFRARED MID-WAVELENGTH REGION

Sizov¹,

Цибрій²,

Вуйчик³

et al. 2016

SEMST

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Abstract. HgCdTe photodiodes of relatively large area (Ø = 0.5 mm) for mid-wave infrared region (MWIR) were fabricated on the base of liquid phase epitaxial layers. Characteristics of these photodiodes were estimated to be applicable as those working in background limited performance (BLIP) mode. It was shown that in spectral range of atmospheric transparency λ = 3 to 5 µm obtained dynamical resistance of HgCdTe photodiodes allow to realize their detectivity D* that are restricted by fluctuations of background radiation with specific power of photon fluxes W eff ≈ 3.3·10 -4 -4.4·10 -5 W/cm 2 .

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Section: Experiments and Estimationsmentioning

confidence: 99%

“…Taking widely used expression for defining Hg 1-x Cd x Te band gap [11] For the angles of view pointed out the detectivity at λ co = 5 µm is long-wavelength boundary λ co manufactured from these layers at 50 % of transparency T max [10]. …”

Section: Experiments and Estimationsmentioning

confidence: 99%

HgCdTe PHOTODIODES FOR INFRARED MID-WAVELENGTH REGION

Sizov¹,

Цибрій²,

Вуйчик³

et al. 2016

SEMST

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“…Narrow−gap semiconductor mercury cadmium telluride solid solution is widely used in creation of highly sensitive infrared detectors [1][2][3]. The bandgap of Hg 1-x Cd x Te de− pends on the content of CdTe which allows creating the infrared detectors for different spectral regions on the basis of this material [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

“…The bandgap of Hg 1-x Cd x Te de− pends on the content of CdTe which allows creating the infrared detectors for different spectral regions on the basis of this material [1][2][3][4]. One of the main types of detectors based on a narrow−gap semiconductor Hg 1-x Cd x Te solid solution are matrix photodiodes for the spectral range of the atmospheric transparency windows of 8-12 μm.…”

Section: Introductionmentioning

confidence: 99%

“…One of the main types of detectors based on a narrow−gap semiconductor Hg 1-x Cd x Te solid solution are matrix photodiodes for the spectral range of the atmospheric transparency windows of 8-12 μm. These ma− trix photodiodes are based on Hg 1-x Cd x Te pn−junctions with x = 0.21-0.23 [1,2]. For operation in the spectral range of 3-5 μm, HgCdTe with the composition of x close to 0.30 (cut−off wavelength equal to 5.1 μm at 77 K) is often used [1,3,4].…”

Section: Introductionmentioning

confidence: 99%

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Influence of composition of the near-surface graded-gap layer on the admittance of metal-insulator-semiconductor structures based on graded-gap MBE n-Hg1−xCdxTe in wide temperature range

Войцеховский

Nesmelov

Dzyadukh

2014

Opto-Electronics Review

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Influence of the CdTe content in a near-surface graded-gap layer on the admittance of MIS-structures fabricated on the basis of heteroepitaxial Hg1−xCdxTe (x = 0.22–0.23 and 0.31–0.32) films grown by molecular beam epitaxy was investigated in a wide temperature range. It is shown that a temperature drop from 77 K to 8 K results in a decrease of hysteresis of the capacitance-voltage (C-V) characteristics and a decrease of frequencies which corresponds to a high-frequency behaviour of C-V characteristics of MIS-structures based on n-HgCdTe (x = 0.22–0.23) with and without graded-gap layersand also for MIS-structures based on n-HgCdTe (x = 0.31–0.32). Temperature dependences of the resistance of the epitaxial film bulk and differential resistance of the space-charge region (SCR) in strong inversion mode were studied. The experimental results can be explained by the fact that for MIS-structures based on n-HgCdTe (x = 0.22–0.23) with the graded-gap layers and for MIS-structures based on n-HgCdTe (x = 0.31–0.32), the differential resistance of SCR is limited by Shockley-Read generation at 25–77 K. Differential resistance of SCR for MIS-structures based on n-HgCdTe (x = 0.22–0.23) without the graded-gap layers is limited by tunnelling through deep levels at 8–77 K.

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Halbleiteroptik

2020

Optik Und Photonik

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Device Physics of Narrow Gap Semiconductors

Cited by 64 publications

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HgCdTe PHOTODIODES FOR INFRARED MID-WAVELENGTH REGION

HgCdTe PHOTODIODES FOR INFRARED MID-WAVELENGTH REGION

Influence of composition of the near-surface graded-gap layer on the admittance of metal-insulator-semiconductor structures based on graded-gap MBE n-Hg1−xCdxTe in wide temperature range

Halbleiteroptik

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