Device performance of transistors with high-/spl kappa/ dielectrics using cross-wafer-scaled interface-layer thickness

Effective work function modulation by controlled dielectric monolayer deposition

“…This was performed on capacitors where the high-k was deposited on SiO 2 whose cross-wafer thickness is varied by chemical etching ͑slant etch͒. 7 The potential barrier between gate electrode and dielectric was evaluated using internal photoemission ͑IPE͒ spectroscopy. In the IPE experiment an ultraviolet light source is used to excite electrons in the MG. As the photon energy is increased towards the barrier height at the metal/dielectric interface, a photocurrent can be detected.…”

Monte Carlo Simulations of High-Performance Implant Free In$_{0.3}$Ga$_{0.7}$As Nano-MOSFETs for Low-Power CMOS Applications

“…The measured Hall mobilities were in the range of 3000-6000 cm /Vs which is an order of magnitude higher than the mobilities typically measured in Si channels [22]. In addition, for the bias range explored, the mobility increases with carrier concentration up to values of at least 1.4 10 cm .…”

Understanding the Origin of Metal Gate Work Function Shift and Its Impact on Erase Performance in 3D NAND Flash Memories

“…The schematic in Figure 2 shows the energy band diagram of an MIS structure. From this, we note that the metal work function can be expressed as follows WF analysis of metal gate electrodes on high-k dielectrics, by monitoring flat-band voltage, V FB (or threshold voltage, V TH ), have been demonstrated in the literature [7][8][9][10][11][12]. The studies report an undesirable shift in the V FB (or V TH ) of metal-oxide-semiconductor (MOS) devices.…”

“…To thoroughly investigate the WL metal and high-k liner combination, and its effect on erase operation, metal work function extraction experiments have been proposed and studied in this work. WF analysis of metal gate electrodes on high-k dielectrics, by monitoring flat-band voltage, VFB (or threshold voltage, VTH), have been demonstrated in the literature [7][8][9][10][11][12]. The studies report an undesirable shift in the VFB (or VTH) of metal-oxide-semiconductor (MOS) devices.…”

“…WF analysis of metal gate electrodes on high-k dielectrics, by monitoring flat-band voltage, V FB (or threshold voltage, V TH ), have been demonstrated in the literature [ 7 , 8 , 9 , 10 , 11 , 12 ]. The studies report an undesirable shift in the V FB (or V TH ) of metal-oxide-semiconductor (MOS) devices.…”