Device performance improvement with Nitrogen implanted during LDD sequence

Auriac, N.; Laviron, C.; Cagnat, N.; Singer, J.; Duriez, B.; Gwoziecki, R.; Chabanne, G.; Rando, Chris

doi:10.1109/iwjt.2007.4279935

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Ecs Transactions 35 (2) 173-184 (2011)1

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“…Carbon coimplants have a similar effect on phosphorus diffusion. As well as being used to improve the pMOS source drain extension, co-implantation is also used for the nMOS contact region (as will be discussed next) and, using C or N, for producing super steep p-type halos [15,16]. Contact implants.…”

Section: Ecs Transactions 35 (2) 173-184 (2011)mentioning

confidence: 99%

(Invited) Recent Developments in Ion Implantation

Renau¹

2011

ECS Trans.

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The last few years have seen significant developments in ion implantation: Commercial implanters are now available with cryogenic capabilities to enable significant reductions in implant induced crystal damage; Plasma doping tools are now extensively used in fabs; Modified sources and new chemistries have been developed that allow some implants to be replaced by more exotic molecular implants to enable simultaneous co-implants and minimize end of range damage; Today's implanters give better dopant placement performance than ever before.These changes have been driven by CMOS scaling challenges, particularly at 32nm and 22nm, along with changes in thermal processing and the emergence of new implant applications.Details of some of these developments are given along with some explanation of the changes that have made them necessary.

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Section: Ecs Transactions 35 (2) 173-184 (2011)mentioning

confidence: 99%