Device Modeling of High Electron Mobility Transistors: Small Signal and Noise Modeling

Abstract

The small signal equivalent circuit model and noise model for high electron mobility transistors (HEMT) are introduced in this paper. The corresponding model parameter extraction methods are also discussed. Three most common used measurement techniques including S-parameter, noise parameter and harmonic performance are described. The signal and noise de-embedding methods for microwave components and circuits in on wafer and coaxial measurement systems are discussed more detail.