Device Modeling for Analog and RF CMOS Circuit Design

Ytterdal, Trond; Cheng, Yuhua; Fjeldly, Tor A.

doi:10.1002/0470863803

Cited by 136 publications

(73 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…and the dielectric capacitance per unit area c a both containing the dielectric capacitance C diel , and V th ¼ kT/q being the thermal voltage, V T the threshold voltage and V the gate voltage 34 . Despite the known differences in operational details between MOSFETs and OTFTs 35 , we can still expect the current in our OTFT device to depend superlinearly on the dielectric capacitance if operated in the subthreshold regime, which matches our experimental observation.…”

Section: Resultsmentioning

confidence: 99%

Flexible polymer transistors with high pressure sensitivity for application in electronic skin and health monitoring

et al. 2013

View full text Add to dashboard Cite

Flexible pressure sensors are essential parts of an electronic skin to allow future biomedical prostheses and robots to naturally interact with humans and the environment. Mobile biomonitoring in long-term medical diagnostics is another attractive application for these sensors. Here we report the fabrication of flexible pressure-sensitive organic thin film transistors with a maximum sensitivity of 8.4 kPa À 1 , a fast response time of o10 ms, high stability over 415,000 cycles and a low power consumption of o1 mW. The combination of a microstructured polydimethylsiloxane dielectric and the high-mobility semiconducting polyisoindigobithiophene-siloxane in a monolithic transistor design enabled us to operate the devices in the subthreshold regime, where the capacitance change upon compression of the dielectric is strongly amplified. We demonstrate that our sensors can be used for non-invasive, high fidelity, continuous radial artery pulse wave monitoring, which may lead to the use of flexible pressure sensors in mobile health monitoring and remote diagnostics in cardiovascular medicine.

show abstract

Section: Resultsmentioning

confidence: 99%

Flexible polymer transistors with high pressure sensitivity for application in electronic skin and health monitoring

et al. 2013

View full text Add to dashboard Cite

show abstract

“…The modeling results are compared with measured data and the maximal relative model error of divider ratio is less than 1.1 %. The intrinsic MOSFET is modeled by the standard BSIM3v3 model described in [8,9,10,11].…”

Section: Discussionmentioning

confidence: 99%

“…Each resistor segment is modeled as R seg = R tot N seg 1 − 1 ratio norm ratio geom (9) where N seg is number of divider segments (excluding sense segment), R tot is total spiral divider resistance and is calculated as…”

Section: Divider Dynamical Modelingmentioning

confidence: 99%

Enhanced Model of Nonlinear Spiral High Voltage Divider

Dobeš¹,

Ptacek²,

Banas³

et al. 2015

RADIOENGINEERING

View full text Add to dashboard Cite

Abstract. This paper deals with the enhanced accurate DC and RF model of nonlinear spiral polysilicon voltage divider. The high resistance polysilicon divider is a sensing part of the high voltage start-up MOSFET transistor that can operate up to 700 V. This paper presents the structure of a proposed model, implemented voltage, frequency and temperature dependency, and scalability. A special attention is paid to the ability of the created model to cover the mismatch and influence of a variation of process parameters on the device characteristics. Finally, the comparison of measured data vs. simulation is presented in order to confirm the model validity and a typical application is demonstrated.

show abstract

“…Although, some of the electric fields called fringing fields go through the air instead of the dielectric and increases the apparent area of the plates which is proportional to the thickness of the dielectric. Since for a MIM capacitor, a thin oxide is used as its dielectric, it makes vertical dimension to be much less than the dimensions of its plates, this problem is usually neglected [47]. In order to decrease the pixel size and consequently increase the fill factor, MIM cap is put on top of the circuit part of a pixel.…”

Section: -4-1 Capacitormentioning

confidence: 99%

Differential integrator pixel architecture for dark current compensation in CMOS image sensors

Dehnavi

Audet

Khamsehashari

2016

2016 14th IEEE International New Circuits and Systems Conference (NEWCAS)

View full text Add to dashboard Cite

There are different approaches to reduce the dark current. The ideal but expensive approach is to modify the fabrication process by enhancing the photosensivity of the pixel or reducing the leakage current. However, some circuit and layout techniques reduce or compensate the dark current of standard CMOS processes which is the method considered in this work.In this thesis a multi-branch differential amplifier circuit is proposed to compensate the effect of dark current in CMOS image sensors. In order to obtain a low level sensing application, a T-type switch with low leakage current is used. The new configuration of multiple-input multipleoutput differential amplifier has the advantage of compensating the femto-ampere dark currents of photodiodes. The objective is to improve the sensitivity and the dynamic range of active pixel CMOS image sensors. A prototype is designed and simulated in a standard CMOS 0.18 µm fabrication process from TSMC.

show abstract

Device Modeling for Analog and RF CMOS Circuit Design

Cited by 136 publications

References 0 publications

Flexible polymer transistors with high pressure sensitivity for application in electronic skin and health monitoring

Flexible polymer transistors with high pressure sensitivity for application in electronic skin and health monitoring

Enhanced Model of Nonlinear Spiral High Voltage Divider

Differential integrator pixel architecture for dark current compensation in CMOS image sensors

Contact Info

Product

Resources

About