2000
DOI: 10.1063/1.372123
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Device model investigation of bilayer organic light emitting diodes

Abstract: Organic materials that have desirable luminescence properties, such as a favorable emission spectrum and high luminescence efficiency, are not necessarily suitable for single layer organic light-emitting diodes (LEDs) because the material may have unequal carrier mobilities or contact limited injection properties. As a result, single layer LEDs made from such organic materials are inefficient. In this article, we present device model calculations of single layer and bilayer organic LED characteristics that dem… Show more

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Cited by 123 publications
(53 citation statements)
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“…In both cases reducing the mobility reduces the current as expected. Our results are very similar to those of Crone et al, 23 who examined the consequence of a Case I type structure for light-emitting diodes. In the context of PV devices, SCL diodes are important because they are often used to derive mobilities for carriers within blend morphologies.…”
Section: Mobility Variations In Scl Diodessupporting
confidence: 81%
“…In both cases reducing the mobility reduces the current as expected. Our results are very similar to those of Crone et al, 23 who examined the consequence of a Case I type structure for light-emitting diodes. In the context of PV devices, SCL diodes are important because they are often used to derive mobilities for carriers within blend morphologies.…”
Section: Mobility Variations In Scl Diodessupporting
confidence: 81%
“…While there has been significant progress in this area over recent years, comprehensive optical studies on device simulation and design have been scarce. The simulations of the charge transport and charge distribution in organic light emitting devices have been reported [3][4]. There have been several works on calculating the emission pattern [5] and external coupling in OLEDs [6].…”
Section: Introductionmentioning
confidence: 99%
“…1, we assume the length of anode (L A ) is equal to 20 nm, the length of cathode (L X ) is equal to 400 nm, and the thicknesses of Alq 3 layer (L y1 ) and TPD layer (L y2 ) are equal to 40 nm, respectively. We solve the steady-state DD model [11][12][13][14], which consists of ) (…”
Section: Mathematical Model and Computational Methodologymentioning
confidence: 99%
“…We consider here the densities of trapped electrons and holes for the j th trap level where N tj (P tj ) is the electron (hole) trap density, E tj is the trap energy relative to the conduction band edge, g is the trap degeneracy, and E fn (E fp ) is the electron (hole) quasi-Fermi level. Boundary conditions are assumed for the DD model above [11][12][13][14].…”
Section: Mathematical Model and Computational Methodologymentioning
confidence: 99%