Device loading effects on nonresonant detection of terahertz radiation by silicon MOSFETs

Stillman, W.; Shur, M. S.; Veksler, D.; Rumyantsev, Sergey; Guarin, F.

doi:10.1049/el:20073475

Cited by 61 publications

(30 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Silicon MOSFETs have been recently shown as sensitive sub-terahertz radiation detectors at room temperature [1][2][3]. The photovoltaic response dependences on the gate length and the gate bias are in good agreement with the Dyakonov-Shur plasma wave detection theory [4].…”

Section: Introductionsupporting

confidence: 55%

Terahertz Photovoltaic Response of Si-MOSFETs: Spin Related Effect

et al. 2011

View full text Add to dashboard Cite

We report on investigations of photovoltaic response of Si-MOSFETs subjected to terahertz radiation in high magnetic fields. Then a DC drain-to-source voltage is developed that shows singularities in magnetic fields corresponding to paramagnetic resonance conditions. These singularities are investigated as a function of incident frequency, temperature and two-dimensional carrier density. We tentatively attribute these resonances to spin transitions of the electrons bound to Si dopants and discuss the possible physical mechanism of the photovoltaic signal generation.

show abstract

Section: Introductionsupporting

confidence: 55%

Terahertz Photovoltaic Response of Si-MOSFETs: Spin Related Effect

et al. 2011

View full text Add to dashboard Cite

show abstract

“…4b) one can notice that the position of this maximum is correlated with the threshold voltage. The shape and the position of the maximum depend also on loading effects [27]. Close to the threshold voltage, the channel resistance diverges to infinity and the transistor behaves like a voltage source with a very high internal resistance.…”

Section: Experiments On Thz Detection With Fetsmentioning

confidence: 99%

Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications

Knap

Dyakonov

Coquillat

et al. 2009

J Infrared Milli Terahz Waves

250

216

View full text Add to dashboard Cite

22 pages, 12 figures, review paperInternational audienceResonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel can be used for the detection and mixing of THz frequencies. At cryogenic temperatures resonant and gate voltage tunable detection related to plasma waves resonances, is observed. At room temperature, when plasma oscillations are overdamped, the FET can operate as an efficient broadband THz detector. We present the main theoretical and experimental results on THz detection by FETs in the context of their possible application for THz imaging

show abstract

“…However, the device is characterized with parallel resistive factors being loaded along the channel, which is originated from the short-channel effect and/or off-the-DGG area in the channel, increasing the background off current. Stillman et al [6] investigated the loading effect on THz detection, and concluded that the load resistance is primarily responsible for the attenuation of the responsivity.…”

Section: Resultsmentioning

confidence: 99%

Device loading effect on nonresonant detection of terahertz radiation in dual grating gate plasmon‐resonant structure using InGaP/InGaAs/GaAs material systems

Moutaouakil

Suemitsu

Otsuji

et al. 2011

Phys. Status Solidi (c)

View full text Add to dashboard Cite

We report on nonresonant detection of terahertz radiation using our original InGaP/InGaAs/GaAs plasmon‐resonant high‐electron‐mobility transistor having a dual grating gate (DGG) structure. The experiments were performed at room temperature using a Gunn diode operating at 0.30 THz as the THz source. Using a device‐loading model, the intrinsic responsivity was extracted and was dependent on the polarization of the incident THz wave. The device exhibited highest response when the electric‐field vector of the incident THz radiation was directed in the source‐drain direction. The 2D spatial distribution image of the transistor responsivity shows a clear beam focus centred on the transistor position, which proves the appropriate coupling of the THz radiation to the device, due to the DGG structure. The device also showed a high intrinsic responsivity of ∼90 V/W and a noise equivalent power (NEP) as low as ∼10‐10 WHz‐0.5. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

Device loading effects on nonresonant detection of terahertz radiation by silicon MOSFETs

Cited by 61 publications

References 6 publications

Terahertz Photovoltaic Response of Si-MOSFETs: Spin Related Effect

Terahertz Photovoltaic Response of Si-MOSFETs: Spin Related Effect

Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications

Device loading effect on nonresonant detection of terahertz radiation in dual grating gate plasmon‐resonant structure using InGaP/InGaAs/GaAs material systems

Contact Info

Product

Resources

About