Proceedings, Fourth Annual IEEE Applied Power Electronics Conference and Exposition
DOI: 10.1109/apec.1989.36984
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Device level simulation for power converters

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Cited by 13 publications
(2 citation statements)
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“…In contrast to the circuit‐level modelling, which considers only the ideal model of power switches, the device‐level real‐time simulation of power converters is becoming popular in recent years. It is capable to present the detailed IGBT/diode transient voltage and current waveforms [5]. Therefore, the switching power dissipations can be computed, which further contributes to the electro‐thermal converter model [6].…”
Section: Introductionmentioning
confidence: 99%
“…In contrast to the circuit‐level modelling, which considers only the ideal model of power switches, the device‐level real‐time simulation of power converters is becoming popular in recent years. It is capable to present the detailed IGBT/diode transient voltage and current waveforms [5]. Therefore, the switching power dissipations can be computed, which further contributes to the electro‐thermal converter model [6].…”
Section: Introductionmentioning
confidence: 99%
“…Measured Drain to Gate CapacitanceWhile specific problems related to modelling power MOS devices have been addressed in a number of studies [2]-[6], methods which are both comprehensive and practical have remained elusive. Previous models generally suffer from one of two problems; inaccuracy or impracticality.…”
mentioning
confidence: 99%