Device characteristics of antenna-coupled metal-insulator-metal diodes (rectenna) using Al2O3, TiO2, and Cr2O3as insulator layer for energy harvesting applications

Inac, Mesut; Shafique, Atia; Özcan, Meriç; Gürbüz, Yaşar

doi:10.1117/12.2188161

Cited by 4 publications

(3 citation statements)

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“…Other oxides that have been considered for inclusion in MIM diodes include ZnO [81,82], V 2 O 5 [20,83], SiO 2 [84,85], Nb 2 O 5 [86,87], CuO [8], TiO 2 [69], Cr 2 O 3 [88], HfO 2 [89] and Sc 2 O 3 [90]. A simple process for fabricating planar-type MIM tunneling diodes using electron beam writing and a boiling water oxidation process has been proposed, achieving high diode sensitivity of −31 V −1 for Poly Si/PolySi [85] and −14.5 V −1 for PolySi/Au electrodes [84] but too high R 0 .…”

Section: Single Insulator Mim Diodesmentioning

confidence: 99%

“…The constraint of only growing a derivative oxide layer of the underlying polycrystalline metal can be resolved by directly depositing an insulator on the bottom metal electrode using different deposition techniques and thus facilitating the use of any type of bottom metal electrode irrespective of its native oxide formation properties. These deposition techniques include sputtering [14,17,20,27,28,45,51,59,74,80,83,90,97,98], electron beam evaporation [88] and atomic layer deposition [8,9,18,30,51,56,58,75,81,89,96,[99][100][101], as listed in Tables 2 and 3. Among these techniques, ALD offers the best quality oxides with low defect density, excellent conformality and uniformity.…”

Section: Permittivity and Scaling Issuesmentioning

confidence: 99%

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Oxides for Rectenna Technology

et al. 2021

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The quest to harvest untapped renewable infrared energy sources has led to significant research effort in design, fabrication and optimization of a self-biased rectenna that can operate without external bias voltage. At the heart of its design is the engineering of a high-frequency rectifier that can convert terahertz and infrared alternating current (AC) signals to usable direct current (DC). The Metal Insulator Metal (MIM) diode has been considered as one of the ideal candidates for the rectenna system. Its unparalleled ability to have a high response time is due to the fast, femtosecond tunneling process that governs current transport. This paper presents an overview of single, double and triple insulator MIM diodes that have been fabricated so far, in particular focusing on reviewing key figures of merit, such as zero-bias responsivity (β0), zero-bias dynamic resistance (R0) and asymmetry. The two major oxide contenders for MInM diodes have been NiO and Al2O3, in combination with HfO2, Ta2O5, Nb2O5, ZnO and TiO2. The latter oxide has also been used in combination with Co3O4 and TiOx. The most advanced rectennas based on MI2M diodes have shown that optimal (β0 and R0) can be achieved by carefully tailoring fabrication processes to control oxide stoichiometry and thicknesses to sub-nanometer accuracy.

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Section: Single Insulator Mim Diodesmentioning

confidence: 99%

Section: Permittivity and Scaling Issuesmentioning

confidence: 99%

Oxides for Rectenna Technology

et al. 2021

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“…MIM diodes are capable of rectification in the high frequency range due to a femtosecond quantum‐tunneling electron transport mechanism through the insulator, making them attractive for applications in solar rectennas, infrared detectors, and wireless power transmission . However, the insulator layer in the MIM stack, which plays a crucial role in determining the diode performance, is typically deposited using vacuum‐based methods, such as sputtering, anodic oxidation of sputtered films, electron beam deposition, and especially atomic layer deposition (ALD), which is commonly used due to its ability to deposit nanoscale films with high accuracy and uniformity. High‐throughput fabrication of MIM diodes is limited by slow deposition rates and the need for a vacuum environment.…”

Section: Introductionmentioning

confidence: 99%

Quantum‐Tunneling Metal‐Insulator‐Metal Diodes Made by Rapid Atmospheric Pressure Chemical Vapor Deposition

Alshehri

Mistry

Nguyễn

et al. 2018

Adv Funct Materials

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A quantum-tunneling metal-insulator-metal (MIM) diode is fabricated by atmospheric pressure chemical vapor deposition (AP-CVD) for the first time. This scalable method is used to produce MIM diodes with high-quality, pinhole-free Al 2 O 3 films more rapidly than by conventional vacuum-based approaches. This work demonstrates that clean room fabrication is not a prerequisite for quantum-enabled devices. In fact, the MIM diodes fabricated by AP-CVD show a lower effective barrier height (2.20 eV) at the electrodeinsulator interface than those fabricated by conventional plasma-enhanced atomic layer deposition (2.80 eV), resulting in a lower turn on voltage of 1.4 V, lower zero-bias resistance, and better asymmetry of 107.The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adfm.201805533. dielectric layer sandwiched between two metal contacts. MIM diodes are capable of rectification in the high frequency range due to a femtosecond quantum-tunneling electron transport mechanism through the insulator, making them attractive for applications in solar rectennas, [1] infrared detectors, [2,3] and wireless power transmission. [4] However, the insulator layer in the MIM stack, which plays a crucial role in determining the diode performance, [5] is typically deposited using vacuum-based methods, such as sputtering, [6] anodic oxidation of sputtered films, [7] electron beam deposition, [8] and especially atomic layer deposition (ALD), [9] which is commonly used due to its ability to deposit nanoscale films with high accuracy and uniformity. High-throughput fabrication of MIM diodes is limited by slow deposition rates and the need for a vacuum environment. Scalable techniques are therefore needed for depositing nanoscale films for the next generation of integrated quantum devices. Some deposition processes have been introduced to fabricate thin films at atmospheric pressure for nanoelectronic devices that utilize quantum phenomena. Thermal and anodic oxidation, for example, have been used to grow thin CrO x and Nb 2 O 5 films on Cr and Nb layers for MIM diodes [7,10] ; atmospheric pressure metal organic vapor phase epitaxial growth (AP-MOVPE), or atmospheric pressure metal organic chemical vapor deposition (AP-MOCVD), has been used to fabricate InGaAsP multiquantum-well structures for optical devices [11] ; the Langmuir Blodgett technique was used to deposit a ZnO film for a MIM diode [12] ; and a chemical vapor deposition (CVD) furnace operated at atmospheric pressure has been used to deposit a TiO 2 film in a tunneling transistor. [13] The need for high temperatures, specific metal films for oxidation, and complex compound precursors in these techniques, as well as challenges in reproducibility, highlight the need for new methods to reliably deposit enabling films for cost-effective quantum devices. Recently, atmospheric pressure spatial atomic layer deposition (AP-SALD) systems have been utilized to grow uniform films for different applications including solar cells...

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Manufacturing of quantum-tunneling MIM nanodiodes via rapid atmospheric CVD in terahertz band

Ozyigit,

Ullah,

Gulsaran

et al. 2023

Sci Rep

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Quantum-tunneling metal–insulator-metal (MIM) diodes have emerged as a significant area of study in the field of materials science and electronics. Our previous work demonstrated the successful fabrication of these diodes using atmospheric pressure chemical vapor deposition (AP-CVD), a scalable method that surpasses traditional vacuum-based methods and allows for the fabrication of high-quality Al2O3 films with few pinholes. Here, we show that despite their extremely small size 0.002 µm2, the MIM nanodiodes demonstrate low resistance at zero bias. Moreover, we have observed a significant enhancement in resistance by six orders of magnitude compared to our prior work, Additionally, we have achieved a high responsivity of 9 AW−1, along with a theoretical terahertz cut-off frequency of 0.36 THz. Our approach provides an efficient alternative to cleanroom fabrication, opening up new opportunities for manufacturing terahertz-Band devices. The results of our study highlight the practicality and potential of our method in advancing nanoelectronics. This lays the foundation for the development of advanced quantum devices that operate at terahertz frequencies, with potential applications in telecommunications, medical imaging, and security systems.

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Device characteristics of antenna-coupled metal-insulator-metal diodes (rectenna) using Al₂O₃, TiO₂, and Cr₂O₃as insulator layer for energy harvesting applications

Cited by 4 publications

References 4 publications

Oxides for Rectenna Technology

Oxides for Rectenna Technology

Quantum‐Tunneling Metal‐Insulator‐Metal Diodes Made by Rapid Atmospheric Pressure Chemical Vapor Deposition

Manufacturing of quantum-tunneling MIM nanodiodes via rapid atmospheric CVD in terahertz band

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