Abstract:<p>In this thesis the properties of thin film spintronic devices are investigated. These devices incorporate rare-earth nitrides as the active elements in a geometry with vertical transport perpendicular to the layers. Many rare-earth nitrides are ferromagnetic semiconductors with a rich range of magnetic properties arising from their 4-f magnetic moments. These magnetic moments contain both spin and orbital contributions, in contrast to the quenched, spin-based magnetism frequently exploited in spintron… Show more
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