Developments of new concept analytical instruments for failure analyses of sub-100 nm devices

Chemical Shift of Electron Energy-Loss Near-Edge Structure on the Nitrogen K-Edge and Titanium L3-Edge at TiN/Ti Interface

“…To date, many studies to elucidate the interface structure between thin films composed TiN x layers have been performed using not only X-ray diffractometry (Kim et al, 2002; Montes de Oca Valero et al, 2005), X-ray photoelectron spectroscopy (XPS) (Conard et al, 1999; Schuler et al, 2001), and Rutherford backscattering spectroscopy (Schuler et al, 2001) but also high-resolution transmission electron microscopy and energy dispersive spectroscopy (Nam et al, 2001; Kim et al, 2002; Montes de Oca Valero et al, 2005). Because a number of failures in devices are caused by unexpected chemical reactions at interfaces when device dimensions are reduced (Mitsui et al, 2001), it becomes important for failure analysis to obtain information on the chemical bond as well as elemental composition with high spatial resolution. In particular, it is interesting to note that the electronic structure of titanium nitride depends on its composition scientifically and technologically because it shows nonstoichiometry in keeping a cubic rock salt structure over a wide range of nitrogen vacancy concentrations.…”

“…but also high-resolution transmission electron microscopy and energy dispersive spectroscopy~Nam et Kim et al, 2002;Montes de Oca Valero et al, 2005!. Because a number of failures in devices are caused by unexpected chemical reactions at interfaces when device dimensions are reduced Mitsui et al, 2001!, it becomes important for failure analysis to obtain information on the chemical bond as well as elemental composition with high spatial resolution. In particular, it is interesting to note that the electronic structure of titanium nitride depends on its composition scientifically and technologically because it shows nonstoichiometry in keeping a cubic rock salt structure over a wide range of nitrogen vacancy concentrations.…”

A transmission electron microscopy study on the crystal structure and atomic arrangement of Al–Nd thin films deposited on glass substrates

“…A transmission electron microscopy (TEM) is a very useful analytical method not only for the microstructural characterization of materials but also for the failure analysis of LCD panels together with time-of-flight secondary ion mass spectrometry (TOF-SIMS), X-ray photoelectron spectroscopy (XPS), and so on [9,10]. Even though the Al-Nd thin films are currently used in The crystal structure and atomic arrangement of Al-2 at.% Nd thin films were investigated by a transmission electron microscopy (TEM) study.…”

Tomography experiment of an integrated circuit specimen using 3MeV electrons in the transmission electron microscope

“…[1][2][3] As an analytical three dimensional ͑3D͒ approach with a higher spatial resolution than the conventional x-ray computed tomography, electron tomography ͑ET͒ is mainly based on transmission electron imaging. It came into biology researches in the 1970s, 4 and extended to materials, physical, and chemical applications in the past few years.…”