Developments at Finisar AOC

Guenter, James K.; Mathes, David T.; Hawkins, Bobby; Tatum, Jim A.

doi:10.1117/12.771311

Cited by 9 publications

(3 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This can be due to scriber or saw damage if no steps have been taken to electrically inactivate the majority of the die area. Even if such precautions have been taken, contaminants on the pick and place needle can induce stacking faults in the die [13]. A 100% visual inspection of all die for cracks or mechanical defects is important to weeding out damaged die.…”

Section: Common Maverick Failure Mechanismsmentioning

confidence: 99%

Design for Reliability and Common Failure Mechanisms in Vertical Cavity Surface Emitting Lasers

Herrick

2012

MRS Proc.

View full text Add to dashboard Cite

Vertical-Cavity Surface-Emitting Lasers are making up a large and growing share of the world's production of semiconductor lasers. But the 850 nm GaAs quantum well VCSELs that make up most of present product are highly vulnerable to dislocation networks. In this paper, we discuss how materials selection affects the reliability of semiconductor lasers generally. We then describe the most common failure mechanisms observed in VCSELs, and what precautions are used to prevent them. We finish with a brief discussion of reliability testing and failure analysis.

show abstract

Section: Common Maverick Failure Mechanismsmentioning

confidence: 99%

Design for Reliability and Common Failure Mechanisms in Vertical Cavity Surface Emitting Lasers

Herrick

2012

MRS Proc.

View full text Add to dashboard Cite

show abstract

“…However, the material used in their fabrication (AlGaAs/GaAs) frequently exhibited degradation problems due to the uniqueness of the laser's characteristic structure (such as its having a vertical optical waveguide and optical aperture). Degradation studies have continued to advance, principally in the USA, 7) and, though a number of problems still remain, improved reliability has been achieved. InGaN blue lasers also now boast high reliability, the results of a number of degradation analysis studies have been reported, and the degradation mechanisms are gradually being resolved.…”

Section: The Evolution Of Semiconductor Optical Device Reliability St...mentioning

confidence: 99%

On Degradation Studies of III–V Compound Semiconductor Optical Devices over Three Decades: Focusing on Gradual Degradation

Ueda

2010

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

This paper describes studies on the reliability of semiconductor optical devices over the course of more than three decades, dating back to the early 1970s. First, a retrospective look is taken at the evolution of optical device development and reliability studies. Second, the three main degradation modes for optical devices (rapid degradation, gradual degradation, and catastrophic failure) are outlined. Third, the results of the classical research into rapid degradation that was carried out in the 1970s and 1980s are presented as an introduction to a systematic discussion of the research that followed-remarkable research into gradual degradation. #

show abstract

“…Vertical-cavity surface-emitting lasers (VCSELs) are recognized as reliable [1,2], low-cost and high-performance light sources for numerous optical systems and applications [3]. High-modulation speed and/or output optical power are of significance for many applications.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and performance of bottom-emitting flip-chip bonded 980 nm vertical-cavity lasers with copper- and indium-plated heat-sinks

Al-Omari

Lear

2011

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Bottom-emitting, flip-chip bonded, oxide-confined, 980 nm vertical-cavity surface-emitting lasers (VCSELs) with improved performance were fabricated and characterized. Flip-chip bonding, bottom-emitting VCSELs with 20 μm active area diameter on copper-and indium-plated heat spreaders reduced the devices' thermal resistance by 35% and increased the bias current density at which the output optical power saturates by 19%, which increased the maximum output optical power achieved by 26%. Bonded VCSELs with active area diameters of 20 μm demonstrated an ∼30% decrease in the active region temperature at the maximum output optical power. A 10% improvement in the devices' modulation bandwidth is calculated due to reduced temperature and increased power. Devices with different active area diameters exhibited a threshold current density and differential quantum efficiency of (0.88 ± 10%) kA cm −2 and 0.57 ± 8%, respectively, implying good active area scaling. A simple rate-equation-based thermal VCSEL model was used to extract different VCSELs' parameters, which enabled the estimation of internal temperature for different device sizes at different bias currents. A genetic algorithm was utilized in model parameter extraction and optimization. Good agreement between measured and simulated characteristics for different device sizes was obtained. Detailed protocols for critical fabrication steps are presented.

show abstract

Developments at Finisar AOC

Cited by 9 publications

References 7 publications

Design for Reliability and Common Failure Mechanisms in Vertical Cavity Surface Emitting Lasers

Design for Reliability and Common Failure Mechanisms in Vertical Cavity Surface Emitting Lasers

On Degradation Studies of III–V Compound Semiconductor Optical Devices over Three Decades: Focusing on Gradual Degradation

Fabrication and performance of bottom-emitting flip-chip bonded 980 nm vertical-cavity lasers with copper- and indium-plated heat-sinks

Contact Info

Product

Resources

About