Development of ultrasensitive indium oxide layer with high response to NO2 gas in indium gallium zinc oxide stack structure using atomic layer deposition

Babu, E. Sunil; Shin, Hyun-Jin; Song, Ki-Woo; Choi, Hyung-Jin; Kim, Sung-Hoon; Lee, H.D.

doi:10.1016/j.matlet.2021.129943

Cited by 4 publications

(1 citation statement)

References 13 publications

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“…The analysis shows that the specific surface area of the thin film affects the detection ability of the sensor for ozone to a certain extent. In 2021, Eadi et al [56] prepared NO 2 sensors based on IGZO thin films with ZnO/Ga 2 O 3 /In 2 O 3 stacked structure using ALD and annealed the devices at 500 • C in oxygen atmosphere for 1 h. The annealing made In 2 O 3 , the top layer of Zn and Ga oxides, more sensitive to NO 2 , so the sensing performance of this structure was superior to that of the sensor structure with ZnO as the top layer. Schematic diagrams of the In 2 O 3 /ZnGa 2 O 4 stacked structure before and after annealing are shown in Fig.…”

Section: Gas Sensorsmentioning

confidence: 99%

The growth and expansive applications of amorphous Ga₂O₃

Yang

Shu

et al. 2023

Chinese Phys. B

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As a promising ultra-wide bandgap semiconductor material, gallium oxide (Ga2O3) is attracting an extensive attention of researchers due to its feasible growth process, appropriate bandgap of 4.4-5.3 eV allowing for deep-ultraviolet (deep-UV) detection, good physical and chemical stability, high breakdown field strength and electron mobility, etc. Different from the strict processes for controllable crystalline Ga2O3 (usually refer to stable monoclinic β-Ga2O3), amorphous Ga2O3 (a-Ga2O3) film can be prepared uniformly at low temperature on a large-area deposition substrate, suggesting great advantages such as low manufacturing cost and excellent flexibility, dispensing with high-temperature and high vacuum techniques. Thus, a-Ga2O3 extremely facilitates important applications in various applied fields. Therefore, in this concise review, we summarized several major deposition methods for a-Ga2O3 films, of which the characteristics were discussed. Additionally, potential methods to optimize the film properties were proposed by right of the inspiration from some recent studies. Subsequently, the applications of a-Ga2O3 thin films, e.g., in photodetectors, resistive random access memories (RRAMs) and gas sensors, were represented with a fruitful discussion of their structures and operating mechanisms.

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Section: Gas Sensorsmentioning

confidence: 99%