Development of ultra pure germanium epi layers for blocked impurity band far infrared detectors

Lutz, Mario

doi:10.2172/5090643

Cited by 3 publications

(2 citation statements)

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“…Residual dopants were found to be acceptors, leading to the choice of growing pure layers on Ga-doped substrates. The main problems encountered in CVD growth were gas phase nucleation and inhomogeneous growth [Rossington, 1988, Lutz, 1991. Structural defects in the epilayers contributed to deep acceptor levels ~ 5 x 10 16 cm -3 .…”

Section: Previous Growth Efforts and Motivation For Lpementioning

confidence: 99%

Liquid phase epitaxial growth and characterization of germanium far infrared blocked impurity band detectors

Bandaru

2001

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Section: Previous Growth Efforts and Motivation For Lpementioning

confidence: 99%

Liquid phase epitaxial growth and characterization of germanium far infrared blocked impurity band detectors

Bandaru

2001

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“…The higher temperatures required to crack GeCL precursors caused substrate dopant out-diffision which resulted in a dopant gradient at the episubstrate interface, where a sharp interface is preferred. Lutz (1991) showed that oxygen contamination occurs at the epi-substrate interface at a concentration of 10" ~m -~. All these attempts to fabricate BIB detectors were successhl to a degree, but still…”

Section: Review Of Past Ge Bib Detector-effortsmentioning

confidence: 99%

Advanced far infrared blocked impurity band detectors based on germanium liquid phase epitaxy

Olsen

1998

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is an equal opportunity employer. DISCLAIMERPortions of this document may be illegible in electronic image products. Images are produced from the best available original document. Germanium Blocked Impurity Band (BIB) detectors have been fabricated using Liquid Phase Epitaxy (LPE) to grow the high purity blocking layer and the heavily doped infrared absorbing layer, the major components of these devices. To achieve the necessary properties of both epilayers, very low structural and electrical defect concentrations are required. We have developed a high purity LPE process which can be used for the growth of high purity as well as purely doped Ge epilayers. We chose the low melting point, high purity metal lead (Pb) which has a negligible solubility in. solid Ge and does not form electronic levels in the band gap of Ge. We have identified the residual impurities Bi, P, LBNL-4 18

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Germanium Far Infrared Blocked Impurity Band Detectors

et al. 1997

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We report on the development of Germanium Blocked Impurity Band (BIB) photoconductors for long wavelength infrared detection in the 100 to 250.μm region. Liquid Phase Epitaxy (LPE) was used to grow the high purity blocking layer, and in some cases, the heavily doped infrared absorbing layer that comprise theses detectors. To achieve the stringent demands on purity and crystalline perfection we have developed a high purity LPE process which can be used for the growth of high purity as well as purely doped Ge epilayers. The low melting point, high purity metal, Pb, was used as a solvent. Pb has a negligible solubility <1017 cm−3 in Ge at 650°C and is isoelectronic with Ge. We have identified the residual impurities Bi, P, and Sb in the Ge epilayers and have determined that the Pb solvent is the source. Experiments are in progress to purify the Pb. The first tests of BIB structures with the purely doped absorbing layer grown on high purity substrates look very promising. The detectors exhibit extended wavelength cutoff when compared to standard Ge:Ga photoconductors (155 μm vs. 120 μm) and show the expected asymmetric current-voltage dependencies. We are currently optimizing doping and layer thickness to achieve the optimum responsivity, Noise Equivalent Power (NEP), and dark current in our devices.

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Development of ultra pure germanium epi layers for blocked impurity band far infrared detectors

Cited by 3 publications

References 11 publications

Liquid phase epitaxial growth and characterization of germanium far infrared blocked impurity band detectors

Liquid phase epitaxial growth and characterization of germanium far infrared blocked impurity band detectors

Advanced far infrared blocked impurity band detectors based on germanium liquid phase epitaxy

Germanium Far Infrared Blocked Impurity Band Detectors

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